中文版 | English
题名

Intrinsic Nonlinear Hall Effect and Gate-Switchable Berry Curvature Sliding in Twisted Bilayer Graphene

作者
通讯作者Wu, Zefei; Meng, Zi Yang; Wang, Ning
发表日期
2023-08-11
DOI
发表期刊
ISSN
0031-9007
EISSN
1079-7114
卷号131期号:6
摘要
Though the observation of the quantum anomalous Hall effect and nonlocal transport response reveals nontrivial band topology governed by the Berry curvature in twisted bilayer graphene, some recent works reported nonlinear Hall signals in graphene superlattices that are caused by the extrinsic disorder scattering rather than the intrinsic Berry curvature dipole moment. In this Letter, we report a Berry curvature dipole induced intrinsic nonlinear Hall effect in high-quality twisted bilayer graphene devices. We also find that the application of the displacement field substantially changes the direction and amplitude of the nonlinear Hall voltages, as a result of a field-induced sliding of the Berry curvature hotspots. Our Letter not only proves that the Berry curvature dipole could play a dominant role in generating the intrinsic nonlinear Hall signal in graphene superlattices with low disorder densities, but also demonstrates twisted bilayer graphene to be a sensitive and fine-tunable platform for second harmonic generation and rectification.
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
重要成果
NI论文
学校署名
其他
资助项目
National Key Ramp;D Program of China[2020YFA0309600] ; Research Grants Council (RGC) of Hong Kong["AoE/P701/20","16303720","C6025 -19G","17301420"] ; RGC of Hong Kong["17301721","17309822"] ; French National Research Agency[GJTD-2020-01] ; K. C. Wong Education Foundation[C7037 -22G] ; null[A_HKU703/22]
WOS研究方向
Physics
WOS类目
Physics, Multidisciplinary
WOS记录号
WOS:001052950800005
出版者
EI入藏号
20233514644676
EI主题词
Fruits ; Graphene devices ; Nonlinear optics ; Quantum chemistry ; Quantum Hall effect
EI分类号
Nonlinear Optics:741.1.1 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Chemical Products Generally:804 ; Agricultural Products:821.4 ; Classical Physics; Quantum Theory; Relativity:931
ESI学科分类
PHYSICS
来源库
Web of Science
引用统计
被引频次[WOS]:22
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/553567
专题工学院_材料科学与工程系
作者单位
1.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China
2.Hong Kong Univ Sci & Technol, Ctr Quantum Mat, Hong Kong, Peoples R China
3.Univ Hong Kong, Dept Phys, Hong Kong, Peoples R China
4.Univ Hong Kong, HKU UCAS Joint Inst Theoret & Computat Phys, Hong Kong, Peoples R China
5.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen, Peoples R China
6.Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
7.Univ Manchester, Dept Phys & Astron, Manchester M13 9PL, England
8.Univ Manchester, Natl Graphene Inst, Mancheser M13 9PL, England
推荐引用方式
GB/T 7714
Huang, Meizhen,Wu, Zefei,Zhang, Xu,et al. Intrinsic Nonlinear Hall Effect and Gate-Switchable Berry Curvature Sliding in Twisted Bilayer Graphene[J]. PHYSICAL REVIEW LETTERS,2023,131(6).
APA
Huang, Meizhen.,Wu, Zefei.,Zhang, Xu.,Feng, Xuemeng.,Zhou, Zishu.,...&Wang, Ning.(2023).Intrinsic Nonlinear Hall Effect and Gate-Switchable Berry Curvature Sliding in Twisted Bilayer Graphene.PHYSICAL REVIEW LETTERS,131(6).
MLA
Huang, Meizhen,et al."Intrinsic Nonlinear Hall Effect and Gate-Switchable Berry Curvature Sliding in Twisted Bilayer Graphene".PHYSICAL REVIEW LETTERS 131.6(2023).
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