HFXZR1-XO2 Ferroelectric Thin Film Grain Size Tuning via Annealing Ramp Rate Achieving Endurance >109 Cycles, 2PR of 40.6μC/CM2, Write Voltage Down to 1.5 V, and Switching Speed of 30 NS

Zhixiong Li1; Bing Zhou1; Jiawei Xu1; Shuaihang Xu1; Jun Lan1; Quanzhou Zhu1; Yingjie Zhu1; Jie Li1; Xuewei Feng2; Mei Shen1; Feichi Zhou1; Longyang Lin1; Yida Li1

10.1109/CSTIC58779.2023.10219383

2023

2023 China Semiconductor Technology International Conference (CSTIC)

979-8-3503-1101-3

2023 China Semiconductor Technology International Conference (CSTIC)

1-3

26-27 June 2023

Shanghai, China

The effect of annealing temperature ramp rate on the grain growth in $\mathrm{H}\mathrm{f}_{\mathrm{x}}\mathrm{Z}\mathrm{r}_{1-\mathrm{x}}\mathrm{O}$ (HZO) ferroelectric thin film is investigated. Using X-Ray Diffraction (XRD) characterization, we find that the ferroelectric phase grain size and uniformity can be improved when the temperature ramp rate is decreased. When fabricated in a MIM capacitor structure, the device can achieve $2P_{r}$ of $\sim 40.6\mu \mathrm{C}/\mathrm{c}\mathrm{m}^{2}$ better crystalline uniformity as compared to the other devices. Consequently, endurance exceeding $10^{9}$ cycles, 30 ns switching speed, polarization voltages down to 1.5V, and multi-states were demonstrated, paving the path for its use in high performance storage and computing applications.

Annealing Ramp Rate Ferroelectric HZO

第一 ; 通讯

EI

20233814740388

Annealing ; Ferroelectric Thin Films ; Ferroelectricity ; Film Growth ; Grain Growth ; Hafnium Compounds ; MIM Devices ; Zirconium Compounds

Heat Treatment Processes:537.1 ; Electricity: Basic Concepts And Phenomena:701.1 ; Semiconductor Devices And Integrated Circuits:714.2 ; Crystal Growth:933.1.2

IEEE

1.Southern University of Science and Technology, Shenzhen, China
2.Shanghai Jiao Tong University, Shanghai, China

Zhixiong Li,Bing Zhou,Jiawei Xu,et al. HFXZR1-XO2 Ferroelectric Thin Film Grain Size Tuning via Annealing Ramp Rate Achieving Endurance >109 Cycles, 2PR of 40.6μC/CM2, Write Voltage Down to 1.5 V, and Switching Speed of 30 NS[C],2023:1-3.