Large Area CVD Mos2 Memristor Suitable for Neuromorphic Applications

Muhammad Zaheer1; Tariq Aziz1; Jun Lan1; Quanzhou Zhu1; Wenhui Wang1; Mei Shen1; Feichi Zhou1; Longyang Lin1; Xuewei Feng2; Yida Li1

10.1109/CSTIC58779.2023.10219255

2023

2023 China Semiconductor Technology International Conference (CSTIC)

979-8-3503-1101-3

2023 China Semiconductor Technology International Conference (CSTIC)

1-3

26-27 June 2023

Shanghai, China

Two-dimensional materials (2DMs) are promising candidates for future electronics due to their atomic thickness and excellent electronic properties. 2DMs based memristors possess unique properties to achieve low operating voltages and efficient switching. In this work, we report on CVD grown, 5-layers MoS2 memristors based crossbar array via transfer approach. The MoS2 memristors show forming free, bipolar resistive switching, operating voltages of 0.7 V, and analog states. The resistive switching mechanism of the MoS2 memristors are revealed to be space charge limited conduction (SCLC) and conductive filament operation mechanism via I-V analysis. Our results pave the way towards enabling large-area 2DMs memristor crossbar array in future neuromorphic applications.

Neuromorphics Memristors Switches Space Charge CMOS Technology Behavioral Sciences Sulfur

第一 ; 通讯

EI

20233814740278

Electric Space Charge ; Electronic Properties ; Layered Semiconductors ; Molybdenum Compounds

Electricity: Basic Concepts And Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices And Integrated Circuits:714.2

IEEE

1.Southern University of Science and Technology, Shenzhen, China
2.Shanghai Jiao Tong University, Shanghai, China

Muhammad Zaheer,Tariq Aziz,Jun Lan,et al. Large Area CVD Mos2 Memristor Suitable for Neuromorphic Applications[C],2023:1-3.