南方科技大学知识苑(SUSTech KC): Roles of Hole Trap on Gate Leakage of p-GaN HEMTs at Cryogenic Temperatures

题名	Roles of Hole Trap on Gate Leakage of p-GaN HEMTs at Cryogenic Temperatures
作者	Zuoheng Jiang1 ; Xinyu Wang 1 ; Junlei Zhao1 ; Junting Chen1 ; Jinjin Tang1 ; Chengcai Wang1 ; Haohao Chen 1 ; Sen Huang 2; Xiaolong Chen1 ; Mengyuan Hua1
发表日期	2023
DOI	10.1109/LED.2023.3311395
发表期刊	IEEE Electron Device Letters 影响因子和分区
ISSN	1558-0563
卷号	PP 期号:99页码:1-1
关键词	p-GaN HEMT cryogenic temperature frozen trap effect gate leakage mechanism
相关链接	[IEEE记录]
收录类别	SCI ; EI
学校署名	第一
WOS记录号	WOS:001080705500006
EI入藏号	20233614686408
EI主题词	Cryogenics ; Deep level transient spectroscopy ; Electron traps ; Gallium nitride ; Hole traps ; III-V semiconductors ; Leakage currents
EI分类号	Cryogenics:644.4 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2
ESI学科分类	ENGINEERING
来源库	IEEE
全文链接	https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10237276
引用统计	被引频次[WOS]：7
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/559258
专题	工学院_电子与电气工程系
作者单位	1.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China 2.Institute of Microelectronics, Key Laboratory of Microelectronic Devices and Integrated Technology, Chinese Academy of Sciences, Beijing, China
第一作者单位	电子与电气工程系
第一作者的第一单位	电子与电气工程系
推荐引用方式 GB/T 7714	Zuoheng Jiang,Xinyu Wang,Junlei Zhao,et al. Roles of Hole Trap on Gate Leakage of p-GaN HEMTs at Cryogenic Temperatures[J]. IEEE Electron Device Letters,2023,PP(99):1-1.
APA	Zuoheng Jiang.,Xinyu Wang.,Junlei Zhao.,Junting Chen.,Jinjin Tang.,...&Mengyuan Hua.(2023).Roles of Hole Trap on Gate Leakage of p-GaN HEMTs at Cryogenic Temperatures.IEEE Electron Device Letters,PP(99),1-1.
MLA	Zuoheng Jiang,et al."Roles of Hole Trap on Gate Leakage of p-GaN HEMTs at Cryogenic Temperatures".IEEE Electron Device Letters PP.99(2023):1-1.