Localized Surface Plasmon Resonance Enables Si-Based Near-Infrared Photodetector

Guanglin Zhang1; Shan Zhang1; Li Zheng2; Huijuan Wu1; Bingkun Wang1; Zhengyi He1; Zhiwen Jin3; Caichao Ye4; Gang Wang1

2023-10

10.1109/TED.2023.3303148

IEEE Transactions on Electron Devices   影响因子和分区

1557-9646

3D-graphene Localized Surface Plasmon Resonance (LSPR) Nano-cavity Near-infrared (NIR) Photodetector

SCI ; EI

英语

通讯

WOS:001063643700001

20233514639550

Density functional theory ; Electric potential ; Graphene ; Heterojunctions ; Infrared devices ; Light absorption ; Photodetectors ; Photons ; Silicon ; Silver nanoparticles ; Surface plasmon resonance

Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Nanotechnology:761 ; Chemical Products Generally:804 ; Probability Theory:922.1 ; Atomic and Molecular Physics:931.3 ; Quantum Theory; Quantum Mechanics:931.4

ENGINEERING

IEEE

在线出版

1.Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, China
2.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
3.School of Physical Science and Technology, Lanzhou University, Lanzhou, China
4.Academy for Advanced Interdisciplinary Studies and Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, China

Guanglin Zhang,Shan Zhang,Li Zheng,et al. Localized Surface Plasmon Resonance Enables Si-Based Near-Infrared Photodetector[J]. IEEE Transactions on Electron Devices,2023,70(10):5497-5500.

Guanglin Zhang.,Shan Zhang.,Li Zheng.,Huijuan Wu.,Bingkun Wang.,...&Gang Wang.(2023).Localized Surface Plasmon Resonance Enables Si-Based Near-Infrared Photodetector.IEEE Transactions on Electron Devices,70(10),5497-5500.

Guanglin Zhang,et al."Localized Surface Plasmon Resonance Enables Si-Based Near-Infrared Photodetector".IEEE Transactions on Electron Devices 70.10(2023):5497-5500.