Non-contact approach to extract Schottky barrier characteristics for gas sensitive nanostructured interfaces

Cao, Kun1; Gong, Guanyi1; Guo, Xiangyang1; He, Yanling2; Ling, Francis Chi Chung2; Ge, Wanyin4; Ng, Alan Man Ching3; Li, Yongxiang1; Yu, Jerry1,3

2023-12-01

10.1016/j.apsusc.2023.158255

APPLIED SURFACE SCIENCE   影响因子和分区

0169-4332

1873-5584

Formation of high precision nanorod based surface morphologies can be engineered with nanotechnology to mimic the function of sensory hairs. Gas sensitive I-V characteristics unique to these surfaces require initialisation under voltage bias and temperature elevation to exploit their band structures and therefore achieve optimal gas response. Prior to detection, devising effective approaches to optimise nanorod based sensors can provide access and efficient control to downsize and significantly miniaturise current gas sensors. In this work, we devised a novel non-contact analysis approach via ultraviolet photoelectron spectroscopy (UPS) to extract specific band structure parameters specifically to locate particular bias for optimal sensor initialisation. The results from five cases all indicate how fabricated nanostructured Schottky barrier heights can be evaluated from UPS data and how their I-V data are correlated and also validate our band structure postulations. The obtained Schottky barrier height values from simulated band structures provided an optimal biasing condition of 0.8 V for Au-ZnO nanorod hydrogen gas sensory operation at 150 degrees C, demonstrating experimental validity with gaselectrical measurements. Further, the gas response data show exponential dependence with gas concentration which is highly relevant for programmable trigger response controlled sensing function based applications.

Schottky diode Schottky barrier height Nanorod Band structure Ultraviolet photoelectron spectroscopy Gas sensor Hydrogen

SCI ; EI

英语

通讯

Chemistry ; Materials Science ; Physics

Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter

WOS:001060848400001

ELSEVIER

20233414614294

Access control ; Band structure ; Chemical sensors ; Gas detectors ; Gases ; Gold compounds ; Hydrogen ; II-VI semiconductors ; Phase interfaces ; Photoelectrons ; Photons ; Schottky barrier diodes ; Structural optimization ; Ultraviolet photoelectron spectroscopy ; Zinc oxide

Electromagnetic Waves:711 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Computer Software, Data Handling and Applications:723 ; Nanotechnology:761 ; Chemistry:801 ; Physical Chemistry:801.4 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2 ; Accidents and Accident Prevention:914.1 ; Optimization Techniques:921.5 ; Atomic and Molecular Physics:931.3 ; Solid State Physics:933 ; Special Purpose Instruments:943.3

MATERIALS SCIENCE

2-s2.0-85168427421

Web of Science

1.RMIT Univ, STO Coll, Sch Engn, 124 Trobe St, Melbourne, Vic 3000, Australia
2.Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Peoples R China
3.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
4.Shaanxi Univ Sci & Technol, New Style Think Tank Shaanxi Univ, Res Ctr Auxiliary Chem & New Mat Dev, Sch Mat Sci & Engn, Xian 710021, Shaanxi, Peoples R China

Cao, Kun,Gong, Guanyi,Guo, Xiangyang,et al. Non-contact approach to extract Schottky barrier characteristics for gas sensitive nanostructured interfaces[J]. APPLIED SURFACE SCIENCE,2023,639.

Cao, Kun.,Gong, Guanyi.,Guo, Xiangyang.,He, Yanling.,Ling, Francis Chi Chung.,...&Yu, Jerry.(2023).Non-contact approach to extract Schottky barrier characteristics for gas sensitive nanostructured interfaces.APPLIED SURFACE SCIENCE,639.

Cao, Kun,et al."Non-contact approach to extract Schottky barrier characteristics for gas sensitive nanostructured interfaces".APPLIED SURFACE SCIENCE 639(2023).