Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction

Ma，Zhenyu1; Zhang，Xin1; Liu，Pu2; Deng，Yong1,3; Hu，Wenyu3; Chen，Longqing4; Zhu，Jun5; Chen，Sen6; Wang，Zhengshang7; Shi，Yuechun8; Ma，Jian1; Wang，Xiaoyi1; Qiu，Yang3; Zhang，Kun4; Cui，Xudong9; Walther，Thomas10

2023-09-04

10.1063/5.0161681

Applied Physics Letters   影响因子和分区

0003-6951

The investigation of chemical reactions during ion irradiation is a frontier for the study of the ion-material interaction. In order to probe the chemistry of ion produced nanoclusters, valence electron energy loss spectroscopy (VEELS) was exploited to investigate Ga ion damage in AlO, InP, and InGaAs, where each target material has been shown to react differently to the interaction between impinging ions, recoil atoms, and vacancies: metallic Ga, ternary InGaP clusters, and metallic In clusters are formed in AlO, InP, and InGaAs, respectively. Supporting simulations based on Monte Carlo and crystal orbital Hamiltonian calculations indicate that the chemical constitution of cascade induced nano-precipitates is a result of a competition between interstitial/vacancy consumption rates and preferential bond formation due to differing bond strengths.

SCI ; EI

英语

NI论文

通讯

WOS:001074765700008

20233714731745

Alumina ; Aluminum oxide ; Bond strength (materials) ; Chemical bonds ; Electron energy levels ; Electron energy loss spectroscopy ; Electron scattering ; Energy dissipation ; III-V semiconductors ; Ion beams ; Ion bombardment ; Ions ; Monte Carlo methods ; Semiconducting indium gallium arsenide ; Semiconducting indium phosphide

Energy Losses (industrial and residential):525.4 ; Semiconducting Materials:712.1 ; Compound Semiconducting Materials:712.1.2 ; Physical Chemistry:801.4 ; Inorganic Compounds:804.2 ; Mathematical Statistics:922.2 ; High Energy Physics:932.1 ; Materials Science:951

PHYSICS

2-s2.0-85170825835

Scopus

1.Southwest Minzu University,State Ethnic Affairs Commission,Chengdu,610041,China
2.NCS Testing Technology Co. Ltd,Chengdu,610041,China
3.SUSTech Core Research Facilities,Southern University of Science and Technology,Shenzhen,518055,China
4.Key Laboratory of Radiation Physics and Technology of Ministry of Education,Institute of Nuclear Science and Technology,Sichuan University,Chengdu,610064,China
5.College of Physical Science and Technology,Sichuan University,Chengdu,610064,China
6.Laboratory for Shock Wave and Detonation Physics,Institute of Fluid Physics,China Academy of Engineering Physics,Sichuan,Mianyang ,621900,China
7.Sichuan Research Center of New Materials,Chengdu,596 Yinhe Road, Shuangliu ,610200,China
8.Yongjiang Laboratory,Ningbo,315000,China
9.Institute of Chemical Materials,China Academy of Engineering Physics,Mianyang,621900,China
10.Department Electronic and Electrical Engineering,University of Sheffield,Sheffield,Mappin St.,S1 3JD,United Kingdom

Ma，Zhenyu,Zhang，Xin,Liu，Pu,et al. Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction[J]. Applied Physics Letters,2023,123(10).

Ma，Zhenyu.,Zhang，Xin.,Liu，Pu.,Deng，Yong.,Hu，Wenyu.,...&Walther，Thomas.(2023).Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction.Applied Physics Letters,123(10).

Ma，Zhenyu,et al."Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction".Applied Physics Letters 123.10(2023).