题名 | Lateral surface passivation of CdSe nanoplatelets through crown management |
作者 | |
通讯作者 | He,Tingchao; Chen,Rui |
发表日期 | 2023-08-10
|
DOI | |
发表期刊 | |
ISSN | 2040-3364
|
EISSN | 2040-3372
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卷号 | 15期号:34页码:14140-14145 |
摘要 | Two-dimensional colloidal CdSe nanoplatelets (NPLs) have been considered as ideal emitting materials for high performance light-emitting devices due to their excellent optical properties. However, the understanding of defect related radiative and nonradiative recombination centers in CdSe NPLs is still far from sufficient, especially their physical distribution locations. In this work, CdSe core and CdSe/CdS core/crown NPLs have been successfully synthesized and their optical properties have been characterized by laser spectroscopies. It is found that the photoluminescence quantum yield of CdSe NPLs is improved by a factor of 4 after the growth of the CdS crown. At low temperatures, the change in the ratio of low and high energy emission intensities from NPLs suggests that the radiative recombination centers are mainly located on the lateral surface of the samples. This finding is further confirmed by the surface passivation experiment. Meanwhile, the nonradiative recombination centers of NPLs located on the lateral surface are also confirmed by ligand exchange. These results demonstrate the importance of understanding the optical properties of the lateral surface of NPLs, which are important for the design of material structures for optoelectronic applications. |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 通讯
|
资助项目 | National Natural Science Foundation of China[62174079]
; Science, Technology and Innovation Commission of Shenzhen Municipality["JCYJ20220530113015035","JCYJ20210324120204011","JCYJ20190808121211510","KQTD2015071710313656"]
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WOS研究方向 | Chemistry
; Science & Technology - Other Topics
; Materials Science
; Physics
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WOS类目 | Chemistry, Multidisciplinary
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; Physics, Applied
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WOS记录号 | WOS:001048316400001
|
出版者 | |
EI入藏号 | 20233614681089
|
EI主题词 | Cadmium sulfide
; II-VI semiconductors
; Light emission
; Optical properties
; Passivation
; Sols
|
EI分类号 | Protection Methods:539.2.1
; Semiconducting Materials:712.1
; Light/Optics:741.1
; Chemical Products Generally:804
|
Scopus记录号 | 2-s2.0-85169503378
|
来源库 | Scopus
|
引用统计 |
被引频次[WOS]:1
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/559737 |
专题 | 工学院_电子与电气工程系 |
作者单位 | 1.Harbin Institute of Technology,Harbin,150001,China 2.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China 3.Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen,518060,China |
第一作者单位 | 电子与电气工程系 |
通讯作者单位 | 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Liu,Huan,Chen,Peixian,Zhang,Xuanyu,et al. Lateral surface passivation of CdSe nanoplatelets through crown management[J]. Nanoscale,2023,15(34):14140-14145.
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APA |
Liu,Huan,Chen,Peixian,Zhang,Xuanyu,Wang,Xiongbin,He,Tingchao,&Chen,Rui.(2023).Lateral surface passivation of CdSe nanoplatelets through crown management.Nanoscale,15(34),14140-14145.
|
MLA |
Liu,Huan,et al."Lateral surface passivation of CdSe nanoplatelets through crown management".Nanoscale 15.34(2023):14140-14145.
|
条目包含的文件 | 条目无相关文件。 |
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