Reversing doping asymmetry in semiconductor thin films with external voltage

Liu，Kai1; Yi，Zhibin1; Luo，Guangfu1,2

2023-07-15

10.1103/PhysRevB.108.035204

Physical Review B   影响因子和分区

2469-9950

2469-9969

Doping asymmetry is a notable phenomenon with semiconductors and a particularly long-standing challenge limiting the applications of most wide band-gap semiconductors, which are inherent of spontaneous heavy Formula Presented- or Formula Presented-type doping because of their extreme band edges. This study theoretically shows that by applying a proper external voltage on materials during their growth or doping processes, we can largely tune the band edges and consequently reverse the doping asymmetry in semiconductor thin films. We take zinc oxide as a touchstone and computationally demonstrate that this voltage-assisted doping approach efficiently suppresses the spontaneous Formula Presented-type defects by around four orders under three distinct growth conditions and successfully generates Formula Presented-type zinc oxide up to the lowest acceptor levels. The proposed approach is insensitive to materials, growth conditions, or defects origins, and thus offers a general solution to the doping asymmetry in semiconductor thin films.

SCI ; EI

英语

第一 ; 通讯

Guangdong Provincial Key Laboratory of Computational Science and Material Design[2019B030301001] ; Introduced Innovative R&D Team of Guangdong[2017ZT07C062] ; Shenzhen Science and Technology Innovation Committee[JCYJ20200109141412308]

Materials Science ; Physics

Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:001062107600004

AMER PHYSICAL SOC

20233014448745

Defects ; Energy gap ; II-VI semiconductors ; Magnetic semiconductors ; Semiconductor doping ; Thin films ; Wide band gap semiconductors

Magnetic Materials:708.4 ; Semiconducting Materials:712.1 ; Inorganic Compounds:804.2 ; Materials Science:951

PHYSICS

2-s2.0-85165646821

Scopus

1.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
2.Guangdong Provincial Key Laboratory of Computational Science and Material Design,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China

Liu，Kai,Yi，Zhibin,Luo，Guangfu. Reversing doping asymmetry in semiconductor thin films with external voltage[J]. Physical Review B,2023,108(3).

Liu，Kai,Yi，Zhibin,&Luo，Guangfu.(2023).Reversing doping asymmetry in semiconductor thin films with external voltage.Physical Review B,108(3).

Liu，Kai,et al."Reversing doping asymmetry in semiconductor thin films with external voltage".Physical Review B 108.3(2023).