A 3.5~7.5 GHz GaAs HEMT Cryogenic Low-NoiseAmplifier Achieving 5 Kelvin Noise Temperature for Qubits Measurement

Peng，Yatao1; Zhong，Youpeng2,3; Guo，Zechen2,3; Liu，Song2,3; Yu，Dapeng2,3

10.1109/IMS37964.2023.10188012

2023

0149-645X

IEEE MTT-S International Microwave Symposium Digest

2023-June

672-675

The measurement of the fast-increasing number of qubits necessitates the use of a large number of specialized cryogenic low-noise amplifiers (LNAs).). This work presents a broadband LNA designed with discrete GaAs HEMT components which operate well at ~3.6 K temperature. The dual-frequency optimum noise matching network and output matching elements of the first stage were employed to optimize the equivalent noise temperature (NT) and the input return loss in a wideband. Measurement results at 3.6 K ambient temperature show that the LNA achieved an equivalent NT of <12 K, and a gain of >30 dB in the 3.5 GHz to 7.5 GHz band with a minimum of 5 Kelvin at ~6.5 GHz. The best visibility of ~0.891 is achieved when using the LNA to observe a superconducting transmon qubit without using a JPA.

cryogenic low noise amplifier GaAs impedance matching network LNA quantum computer transmon

其他

英语

EI

20233414620119

Cryogenics ; Gallium arsenide ; III-V semiconductors ; Impedance matching (electric) ; Qubits ; Semiconducting gallium

Cryogenics:644.4 ; Semiconducting Materials:712.1 ; Single Element Semiconducting Materials:712.1.1 ; Amplifiers:713.1 ; Light, Optics and Optical Devices:741 ; Nanotechnology:761 ; Chemical Products Generally:804

2-s2.0-85168543010

Scopus

1.University of Macau,State Key Lab. of Analog and Mixed-Signal VLSI,IME/ECE of FST,Macao
2.Shenzhen International Quantum Academy,China
3.SUSTech,Shenzhen Institute for Quantum Science and Engineering,China

Peng，Yatao,Zhong，Youpeng,Guo，Zechen,et al. A 3.5~7.5 GHz GaAs HEMT Cryogenic Low-NoiseAmplifier Achieving 5 Kelvin Noise Temperature for Qubits Measurement[C],2023:672-675.