Interface charge engineering on an in situ SiN_x/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance

He, Jiaqi1,2; Wen, Kangyao1; Wang, Peiran1; He, Minghao1,3; Du, Fangzhou1; Jiang, Yang1; Tang, Chuying1; Tao, Nick4; Wang, Qing1,5; Li, Gang2; Yu, Hongyu1,5

2023-09-04

10.1063/5.0169944

APPLIED PHYSICS LETTERS   影响因子和分区

0003-6951

1077-3118

This work adopts interface charge engineering to fabricate normally off metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on an in situ SiNx/AlGaN/GaN platform using an in situ O-3 treatment performed in the atomic layer deposition system. The combination of in situ SiNx passivation and an O-3-treated Al2O3/AlGaN gate interface allows the device to provide an excellent breakdown voltage of 1498 V at a low specific on-resistance of 2.02m Omega cm(2). The threshold voltage is increased by 2V by significantly compensating the net polarization charges by more than five times with O-3 treatment as well as reducing the interface traps and improving the hightemperature gate stability. Furthermore, a physical model of fixed charges at the Al2O3/AlGaN interface is established based on dielectric thickness-dependent linear fitting and numerical calculations. The matched device performance and simulated energy band bending elucidate the O-3-treated fixed-charge modulation mechanism, providing a practical method for producing normally off GaN MIS-HEMTs.

SCI ; EI

英语

NI论文

第一 ; 通讯

This work was supported by the National Natural Science Foundation of China (Grant No. 62122004), Research on the Fabrication and Mechanism of GaN Power and RF Devices (Grant No. JCYJ20200109141233476), Study on the Reliability of GaN Power Devices (Grant[JCYJ20200109141233476] ; National Natural Science Foundation of China[JCYJ20220818100605012] ; Research on the Fabrication and Mechanism of GaN Power and RF Devices["JCYJ20210324120409025","HZQB-KCZYZ-2021052"] ; null[62122004]

Physics

Physics, Applied

WOS:001063792500004

AIP Publishing

20233814740807

Alumina ; Aluminum oxide ; Atomic layer deposition ; High electron mobility transistors ; III-V semiconductors ; Metal insulator boundaries ; MIS devices ; Threshold voltage ; Wide band gap semiconductors

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Inorganic Compounds:804.2 ; Coating Techniques:813.1 ; Crystal Growth:933.1.2

PHYSICS

Web of Science

1.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China
2.Hong Kong Polytech Univ, Dept Elect & Informat Engn, Hong Kong, Peoples R China
3.Natl Univ Singapore, Dept Elect & Comp Engn, Singapore, Singapore
4.Maxscend Microelect Co Ltd, Wuxi 214072, Peoples R China
5.Southern Univ Sci & Technol, Minist Educ, Engn Res Ctr Integrated Circuits Next Generat Comm, Shenzhen 518055, Peoples R China

He, Jiaqi,Wen, Kangyao,Wang, Peiran,et al. Interface charge engineering on an in situ SiN_x/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance[J]. APPLIED PHYSICS LETTERS,2023,123(10).

He, Jiaqi.,Wen, Kangyao.,Wang, Peiran.,He, Minghao.,Du, Fangzhou.,...&Yu, Hongyu.(2023).Interface charge engineering on an in situ SiN_x/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance.APPLIED PHYSICS LETTERS,123(10).

He, Jiaqi,et al."Interface charge engineering on an in situ SiN_x/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance".APPLIED PHYSICS LETTERS 123.10(2023).