南方科技大学知识苑(SUSTech KC): Investigation of On-Wafer ESD Characteristics (HBM and TLP) of Lateral GaN-on-Si SBDs

题名	Investigation of On-Wafer ESD Characteristics (HBM and TLP) of Lateral GaN-on-Si SBDs
作者	Jiawei Chen; Junbo Liu; Wensong Zou; Jun Ma
通讯作者	Jun Ma
发表日期	2023
DOI	10.1109/TED.2023.3325310
发表期刊	IEEE Transactions on Electron Devices 影响因子和分区
ISSN	1557-9646
卷号	PP 期号:99页码:1-4
关键词	Electronic Static Discharge (ESD) GaN-on-Si Human-body-model (HBM) Schottky Barrier Diodes (SBDs) Transmission-line-pulse (TLP)
相关链接	[IEEE记录]
收录类别	SCI ; EI
语种	英语
学校署名	第一 ; 通讯
WOS记录号	WOS:001111952000001
EI入藏号	20240215341642
EI主题词	Electric Discharges ; Electric Lines ; Electric Power Transmission ; Electrostatic Devices ; Gallium Nitride ; III-V Semiconductors ; Interface States ; Latexes ; Silicon Wafers ; Transient Analysis
EI分类号	Electricity: Basic Concepts And Phenomena:701.1 ; Electric Power Transmission:706.1.1 ; Electric Power Lines And Equipment:706.2 ; Semiconducting Materials:712.1 ; Semiconductor Devices And Integrated Circuits:714.2 ; Colloid Chemistry:801.3 ; Classical Physics ; Quantum Theory ; Relativity:931 ; High Energy Physics ; Nuclear Physics ; Plasma Physics:932
ESI学科分类	ENGINEERING
来源库	IEEE
全文链接	https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10298254
引用统计
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/582742
专题	工学院_电子与电气工程系
作者单位	Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China
第一作者单位	电子与电气工程系
通讯作者单位	电子与电气工程系
第一作者的第一单位	电子与电气工程系
推荐引用方式 GB/T 7714	Jiawei Chen,Junbo Liu,Wensong Zou,et al. Investigation of On-Wafer ESD Characteristics (HBM and TLP) of Lateral GaN-on-Si SBDs[J]. IEEE Transactions on Electron Devices,2023,PP(99):1-4.
APA	Jiawei Chen,Junbo Liu,Wensong Zou,&Jun Ma.(2023).Investigation of On-Wafer ESD Characteristics (HBM and TLP) of Lateral GaN-on-Si SBDs.IEEE Transactions on Electron Devices,PP(99),1-4.
MLA	Jiawei Chen,et al."Investigation of On-Wafer ESD Characteristics (HBM and TLP) of Lateral GaN-on-Si SBDs".IEEE Transactions on Electron Devices PP.99(2023):1-4.