Mechanically Gated Transistor

Huang, Boyuan1,2; Yu, Ye1,2,3; Zhang, Fengyuan1,2; Liang, Yuhang3; Su, Shengyao1,2; Zhang, Mei1,2; Zhang, Yuan1,2; Li, Changjian1,2; Xie, Shuhong3; Li, Jiangyu1,2

2023-10-01

10.1002/adma.202305766

ADVANCED MATERIALS   影响因子和分区

0935-9648

1521-4095

Silicon-based field effect transistors have underpinned the information revolution in the last 60 years, and there is a strong desire for new materials, devices, and architectures that can help sustain the computing power in the age of big data and artificial intelligence. Inspired by the Piezo channels, a mechanically gated transistor abandoning electric gating altogether, achieving an ON/OFF ratio over three orders of magnitude under a mechanical force of hundreds of nN is developed. The two-terminal device utilizes flexoelectric polarization induced by strain gradient, which modulates the carrier concentration in a Van der Waals structure significantly, and it mimics Piezo channels for artificial tactile perception. This simple device concept can be easily adapted to a wide range of semiconducting materials, helping promote the fusion between mechanics and electronics in a similar way as mechanobiology.

flexoelectricity Piezo channels transistors Van der Waals structures

SCI ; EI

英语

NI论文

第一 ; 通讯

This work was supported by the National Natural Science Foundation of China (No. 12192213, No. 12102164, No. 52172115), National Key Research and Development Program of China (2022YFF0706100), Guangdong Provincial Key Laboratory Program (2021B1212040001),["12192213","12102164","52172115"] ; National Natural Science Foundation of China[2022YFF0706100] ; National Key Research and Development Program of China[2021B1212040001] ; Guangdong Provincial Key Laboratory Program["JCYJ20220818100410022","RCBS20210609103201007"] ; Shenzhen Science and Technology Program[2020A1515110989]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:001093906100001

WILEY-V C H VERLAG GMBH

20234314953483

Computing power ; Field effect transistors ; Van der Waals forces

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Computer Peripheral Equipment:722.2 ; Digital Computers and Systems:722.4 ; Computer Software, Data Handling and Applications:723 ; Physical Chemistry:801.4 ; Atomic and Molecular Physics:931.3

MATERIALS SCIENCE

Web of Science

1.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
2.Southern Univ Sci & Technol, Guangdong Prov Key Lab Funct Oxide Mat & Devices, Shenzhen 518055, Guangdong, Peoples R China
3.Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Hunan, Peoples R China

Huang, Boyuan,Yu, Ye,Zhang, Fengyuan,et al. Mechanically Gated Transistor[J]. ADVANCED MATERIALS,2023,35.

Huang, Boyuan.,Yu, Ye.,Zhang, Fengyuan.,Liang, Yuhang.,Su, Shengyao.,...&Li, Jiangyu.(2023).Mechanically Gated Transistor.ADVANCED MATERIALS,35.

Huang, Boyuan,et al."Mechanically Gated Transistor".ADVANCED MATERIALS 35(2023).