题名 | Two-dimensional type-II MSi2N4/InS (M = Mo, W) heterostructures for photocatalysis |
作者 | |
通讯作者 | Xu, Wangping; Wu, Xiaozhi |
发表日期 | 2023-09-25
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DOI | |
发表期刊 | |
ISSN | 0003-6951
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EISSN | 1077-3118
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卷号 | 123期号:13 |
摘要 | Recently, two-dimensional (2D) ternary monolayer MSi2N4 (M = Mo, W) was synthesized by chemical vapor deposition. However, monolayer MSi2N4 (M = Mo, W) has an indirect bandgap, which seriously hinders its application in optoelectronic devices. Herein, we propose two MSi2N4/InS (M = Mo, W) van der Waals heterojunctions (vdWHs) possessing type-II band alignments by first-principles. Our results indicate that these vdWHs achieve an indirect-to-direct bandgap transition and exhibit fascinating optical absorption spectra in the range of visible light. Moreover, the light absorption efficiencies of both vdWHs are significantly strengthened, and the intrinsic electric field of vdWHs can effectively promote the separation of photogenerated electron-hole pairs. In particular, the most significant electron mobility of MSi2N4/InS (M = Mo, W) vdWHs is up to 6.6 x 10(3) cm(2) V-1 s(-1), demonstrating their considerable potential for optoelectronic device applications. Notably, MSi2N4/InS (M = Mo, W) vdWHs can facilitate water splitting due to their suitable band edges. Therefore, our findings demonstrate two 2D MSi2N4/InS (M = Mo, W) type-II vdWHs with fascinating potentials for photocatalysis. |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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重要成果 | NI论文
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学校署名 | 其他
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资助项目 | This work was supported in part by the Natural Science Foundation of China (Grant Nos. 12174040, 12147102, 12204398, and 52273175), the Chongqing Natural Science Foundation (Grant No. cstc2020jcyj-msxmX0118), the Department of Science and Technology of Hun["12174040","12147102","12204398","52273175"]
; Natural Science Foundation of China[cstc2020jcyj-msxmX0118]
; Chongqing Natural Science Foundation[2023JJ40617]
; Department of Science and Technology of Hunan Province[2021A1515110127]
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WOS研究方向 | Physics
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WOS类目 | Physics, Applied
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WOS记录号 | WOS:001079929200018
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出版者 | |
EI入藏号 | 20234014843011
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EI主题词 | Chemical vapor deposition
; Electric fields
; Energy gap
; Light absorption
; Monolayers
; Optoelectronic devices
; Photocatalysis
; Van der Waals forces
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EI分类号 | Electricity: Basic Concepts and Phenomena:701.1
; Semiconductor Devices and Integrated Circuits:714.2
; Light/Optics:741.1
; Optical Devices and Systems:741.3
; Physical Chemistry:801.4
; Chemical Reactions:802.2
; Atomic and Molecular Physics:931.3
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ESI学科分类 | PHYSICS
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来源库 | Web of Science
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引用统计 |
被引频次[WOS]:4
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/582936 |
专题 | 科学与工程计算中心 |
作者单位 | 1.Chongqing Univ, Inst Struct & Funct, Chongqing 401331, Peoples R China 2.Chongqing Univ, Dept Phys, Chongqing 401331, Peoples R China 3.Xiangtan Univ, Hunan Inst Adv Sensing & Informat Technol, Xiangtan 411105, Peoples R China 4.Foshan Southern China Inst New Mat, Foshan 528200, Guangdong, Peoples R China 5.Southern Univ Sci & Technol, Ctr Computat Sci & Engn, Shenzhen 518055, Peoples R China |
推荐引用方式 GB/T 7714 |
Shi, Li,Xu, Wangping,Qiu, Xia,et al. Two-dimensional type-II MSi2N4/InS (M = Mo, W) heterostructures for photocatalysis[J]. APPLIED PHYSICS LETTERS,2023,123(13).
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APA |
Shi, Li.,Xu, Wangping.,Qiu, Xia.,Xiao, Xiaoliang.,Wei, Haoran.,...&Wu, Xiaozhi.(2023).Two-dimensional type-II MSi2N4/InS (M = Mo, W) heterostructures for photocatalysis.APPLIED PHYSICS LETTERS,123(13).
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MLA |
Shi, Li,et al."Two-dimensional type-II MSi2N4/InS (M = Mo, W) heterostructures for photocatalysis".APPLIED PHYSICS LETTERS 123.13(2023).
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条目包含的文件 | 条目无相关文件。 |
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