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题名

Two-dimensional type-II MSi2N4/InS (M = Mo, W) heterostructures for photocatalysis

作者
通讯作者Xu, Wangping; Wu, Xiaozhi
发表日期
2023-09-25
DOI
发表期刊
ISSN
0003-6951
EISSN
1077-3118
卷号123期号:13
摘要
Recently, two-dimensional (2D) ternary monolayer MSi2N4 (M = Mo, W) was synthesized by chemical vapor deposition. However, monolayer MSi2N4 (M = Mo, W) has an indirect bandgap, which seriously hinders its application in optoelectronic devices. Herein, we propose two MSi2N4/InS (M = Mo, W) van der Waals heterojunctions (vdWHs) possessing type-II band alignments by first-principles. Our results indicate that these vdWHs achieve an indirect-to-direct bandgap transition and exhibit fascinating optical absorption spectra in the range of visible light. Moreover, the light absorption efficiencies of both vdWHs are significantly strengthened, and the intrinsic electric field of vdWHs can effectively promote the separation of photogenerated electron-hole pairs. In particular, the most significant electron mobility of MSi2N4/InS (M = Mo, W) vdWHs is up to 6.6 x 10(3) cm(2) V-1 s(-1), demonstrating their considerable potential for optoelectronic device applications. Notably, MSi2N4/InS (M = Mo, W) vdWHs can facilitate water splitting due to their suitable band edges. Therefore, our findings demonstrate two 2D MSi2N4/InS (M = Mo, W) type-II vdWHs with fascinating potentials for photocatalysis.
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收录类别
SCI ; EI
语种
英语
重要成果
NI论文
学校署名
其他
资助项目
This work was supported in part by the Natural Science Foundation of China (Grant Nos. 12174040, 12147102, 12204398, and 52273175), the Chongqing Natural Science Foundation (Grant No. cstc2020jcyj-msxmX0118), the Department of Science and Technology of Hun["12174040","12147102","12204398","52273175"] ; Natural Science Foundation of China[cstc2020jcyj-msxmX0118] ; Chongqing Natural Science Foundation[2023JJ40617] ; Department of Science and Technology of Hunan Province[2021A1515110127]
WOS研究方向
Physics
WOS类目
Physics, Applied
WOS记录号
WOS:001079929200018
出版者
EI入藏号
20234014843011
EI主题词
Chemical vapor deposition ; Electric fields ; Energy gap ; Light absorption ; Monolayers ; Optoelectronic devices ; Photocatalysis ; Van der Waals forces
EI分类号
Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Optical Devices and Systems:741.3 ; Physical Chemistry:801.4 ; Chemical Reactions:802.2 ; Atomic and Molecular Physics:931.3
ESI学科分类
PHYSICS
来源库
Web of Science
引用统计
被引频次[WOS]:4
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/582936
专题科学与工程计算中心
作者单位
1.Chongqing Univ, Inst Struct & Funct, Chongqing 401331, Peoples R China
2.Chongqing Univ, Dept Phys, Chongqing 401331, Peoples R China
3.Xiangtan Univ, Hunan Inst Adv Sensing & Informat Technol, Xiangtan 411105, Peoples R China
4.Foshan Southern China Inst New Mat, Foshan 528200, Guangdong, Peoples R China
5.Southern Univ Sci & Technol, Ctr Computat Sci & Engn, Shenzhen 518055, Peoples R China
推荐引用方式
GB/T 7714
Shi, Li,Xu, Wangping,Qiu, Xia,et al. Two-dimensional type-II MSi2N4/InS (M = Mo, W) heterostructures for photocatalysis[J]. APPLIED PHYSICS LETTERS,2023,123(13).
APA
Shi, Li.,Xu, Wangping.,Qiu, Xia.,Xiao, Xiaoliang.,Wei, Haoran.,...&Wu, Xiaozhi.(2023).Two-dimensional type-II MSi2N4/InS (M = Mo, W) heterostructures for photocatalysis.APPLIED PHYSICS LETTERS,123(13).
MLA
Shi, Li,et al."Two-dimensional type-II MSi2N4/InS (M = Mo, W) heterostructures for photocatalysis".APPLIED PHYSICS LETTERS 123.13(2023).
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