题名 | Optimized Thermoelectric Performance and Plasticity of Ductile Semiconductor Ag2S0.5Se0.5 Via Dual-Phase Engineering |
作者 | |
通讯作者 | Liu, Qingfeng; Chen, Zhi-Gang |
发表日期 | 2023-10-01
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DOI | |
发表期刊 | |
ISSN | 1614-6832
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EISSN | 1614-6840
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卷号 | 13 |
摘要 | Inorganic semiconductor Ag2S with excellent plasticity is highly desired in flexible and wearable thermoelectrics. However, the compromise between plasticity and thermoelectric performance limits the advances in Ag2S-based thermoelectric materials and their devices. Here, a 0.5 mol.% Ag2Te-alloyed Ag2S0.5Se0.5 bulk material is designed, which has a competitively high near-room-temperature figure of merit of approximate to 0.43 at 323 K and an ultra-high bending strain of approximate to 32.5% without cracks. Introducing Ag2Te can optimize the carrier concentration and mobility of the Ag2S0.5Se0.5 matrix due to its metal-like conducting features, leading to a maximum power factor of approximate to 6 mu W cm(-1) K-2. Simultaneously, Ag2Te induces Ag-poor amorphous phase boundaries, serving as buffer layers to enhance the overall plasticity. Moreover, such amorphous phase boundaries combined with multiscale phonon scattering sources can significantly suppress the lattice thermal conductivity to approximate to 0.28 W m(-1) K-1 at 323 K, leading to a high figure of merit. This study demonstrates an innovative route to simultaneously boost the thermoelectric performance and plasticity of ductile semiconductors. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 其他
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WOS研究方向 | Chemistry
; Energy & Fuels
; Materials Science
; Physics
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WOS类目 | Chemistry, Physical
; Energy & Fuels
; Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
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WOS记录号 | WOS:001076653000001
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出版者 | |
EI入藏号 | 20234014828779
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EI主题词 | Buffer layers
; Carrier mobility
; Ductile fracture
; Plasticity
; Silver alloys
; Silver compounds
; Thermal conductivity
; Thermoelectricity
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EI分类号 | Precious Metals:547.1
; Thermodynamics:641.1
; Electricity: Basic Concepts and Phenomena:701.1
; Semiconducting Materials:712.1
; Crystalline Solids:933.1
; Materials Science:951
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来源库 | Web of Science
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引用统计 |
被引频次[WOS]:26
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/583000 |
专题 | 理学院_物理系 |
作者单位 | 1.Nanjing Tech Univ, Coll Chem Engn, State Key Lab Mat Oriented Chem Engn, Nanjing 211816, Peoples R China 2.Queensland Univ Technol, Sch Chem & Phys, Brisbane, Qld 4001, Australia 3.Queensland Univ Technol, Ctr Mat Sci, Brisbane, Qld 4001, Australia 4.Univ Queensland, Sch Mech & Ming Engn, Brisbane, Qld 4072, Australia 5.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China 6.Southern Univ Sci & Technol, Guangdong Prov Key Lab Computat Sci & Mat Design, Shenzhen 518055, Peoples R China 7.Univ Queensland, Australian Inst Bioengn & Nanotechnol, Brisbane, Qld 4072, Australia 8.Nanjing Tech Univ, Coll Mat Sci & Engn, Nanjing 211816, Peoples R China |
推荐引用方式 GB/T 7714 |
Wu, Hao,Shi, Xiao-Lei,Mao, Yuanqing,et al. Optimized Thermoelectric Performance and Plasticity of Ductile Semiconductor Ag2S0.5Se0.5 Via Dual-Phase Engineering[J]. ADVANCED ENERGY MATERIALS,2023,13.
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APA |
Wu, Hao.,Shi, Xiao-Lei.,Mao, Yuanqing.,Li, Meng.,Liu, Wei-Di.,...&Chen, Zhi-Gang.(2023).Optimized Thermoelectric Performance and Plasticity of Ductile Semiconductor Ag2S0.5Se0.5 Via Dual-Phase Engineering.ADVANCED ENERGY MATERIALS,13.
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MLA |
Wu, Hao,et al."Optimized Thermoelectric Performance and Plasticity of Ductile Semiconductor Ag2S0.5Se0.5 Via Dual-Phase Engineering".ADVANCED ENERGY MATERIALS 13(2023).
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