南方科技大学知识苑(SUSTech KC): Bubble domain evolution in well-ordered BiFeO<sub>3</sub> nanocapacitors

题名	Bubble domain evolution in well-ordered BiFeO₃ nanocapacitors
作者	Zhang, Fengyuan1,2 ; Tian, Guo 3,4; Zhao, Lina 5; Gao, Xingsen 3,4; Li, Jiangyu1,2
通讯作者	Zhang, Fengyuan
发表日期	2023-08-01
DOI	10.1142/S2010135X23450030
发表期刊	JOURNAL OF ADVANCED DIELECTRICS 影响因子和分区
ISSN	2010-135X
EISSN	2010-1368
摘要	Ferroelectric nanocapacitors have attracted intensive research interest due to their novel functionalities and potential application in nanodevices. However, due to the lack of knowledge of domain evolution in isolated nanocapacitors, precise manipulation of topological domain switching in the nanocapacitor is still a challenge. Here, we report unique bubble and cylindrical domains in the well-ordered BiFeO3 nanocapacitor array. The transformation of bubble, cylindrical and mono domains in isolated ferroelectric nanocapacitor has been demonstrated via scanning probe microscopy (SPM). The bubble domain can be erased to mono domain or written to cylindrical domain and mono domain by positive and negative voltage, respectively. Additionally, the domain evolution rules, which are mainly affected by the depolarization field, have been observed in the nanocapacitors with different domain structures. This work will be helpful in understanding the domain evolution in ferroelectric nanocapacitors and providing guidance on the manipulation of nanoscale topological domains.
关键词	Ferroelectrics SPM domain evolution bubble domain nanocapacitor array
相关链接	[来源记录]
收录类别	ESCI
语种	英语
学校署名	第一 ; 通讯
资助项目	Guangdong Basic and Applied Basic Research Foundation[2021A1515110155] ; National Key Research and Development Program of China[2022YFF0706100] ; National Natural Science Foundation of China["92066203","12192213","U22A20117","52002134"] ; Guangdong Provincial Key Laboratory Program from Guangdong Science and Technology Department[2021B1212040001] ; Science and Technology Projects in Guangzhou[202201000008]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:001047991800001
出版者	WORLD SCIENTIFIC PUBL CO PTE LTD
来源库	Web of Science
引用统计
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/583017
专题	工学院_材料科学与工程系
作者单位	1.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China 2.Southern Univ Sci & Technol, Guangdong Prov Key Lab Funct Oxide Mat & Devices, Shenzhen 518055, Peoples R China 3.South China Normal Univ, Inst Adv Mat, South China Acad Adv Optoelect, Guangzhou 510006, Peoples R China 4.South China Normal Univ, Guangdong Prov Key Lab Opt Informat Mat & Technol, Guangzhou 510006, Peoples R China 5.Tsinghua Shenzhen Int Grad Sch, Inst Data & Informat, Shenzhen 518055, Peoples R China
第一作者单位	材料科学与工程系; 南方科技大学
通讯作者单位	材料科学与工程系; 南方科技大学
第一作者的第一单位	材料科学与工程系
推荐引用方式 GB/T 7714	Zhang, Fengyuan,Tian, Guo,Zhao, Lina,et al. Bubble domain evolution in well-ordered BiFeO₃ nanocapacitors[J]. JOURNAL OF ADVANCED DIELECTRICS,2023.
APA	Zhang, Fengyuan,Tian, Guo,Zhao, Lina,Gao, Xingsen,&Li, Jiangyu.(2023).Bubble domain evolution in well-ordered BiFeO₃ nanocapacitors.JOURNAL OF ADVANCED DIELECTRICS.
MLA	Zhang, Fengyuan,et al."Bubble domain evolution in well-ordered BiFeO₃ nanocapacitors".JOURNAL OF ADVANCED DIELECTRICS (2023).