The strain, energy band and photoluminescence of GaAs0.92Sb0·08/Al0.3Ga0.7As multiple quantum wells grown on GaAs substrate

Gao，Xian1,3; Fang，Xuan1; Tang，Jilong1; Fang，Dan1; Wang，Dengkui1; Wang，Xiaohua1; Chen，Rui3; Xu，Shijie2; Wei，Zhipeng1

2020-03-01

10.1016/j.ssc.2020.113837

SOLID STATE COMMUNICATIONS   影响因子和分区

0038-1098

1879-2766

GaAsSb based materials have become the promising system for infrared semiconductor lasers and detectors. In this article, the strain, energy band structures and photoluminescence (PL) of GaAsSb/AlGaAs strained quantum wells (QWs) grown with molecular beam epitaxy are systematically analyzed both theoretically and experimentally. The theoretical results are derived by Kane's model and k⋅p method, and the optical properties of a high-quality GaAsSb/AlGaAs strained QWs sample are thoroughly investigated by excitation- and temperature-dependent PL measurements. The theoretical results show the strain has significant influence on the band structure of QWs. In experimental part, it is found that the light-hole exciton emission coexists with the heavy-hole exciton line in the temperature range of 50 K–300 K. However, the emission of localized excitons, which is caused by the nonuniformity of component in the GaAsSb well layer, takes over the light-hole exciton emission at lower temperatures (<50 K).

A. GaAsSb/AlGaAs strained quantum well B. molecular beam epitaxy C. band structure D. photoluminescence

EI ; SCI

英语

其他

National Natural Science Foundation of China[11674038] ; People's Government of Jilin Province[20160520027JH] ; People's Government of Jilin Province[20170520118JH] ; China Postdoctoral Science Foundation[2019M652176] ; National Natural Science Foundation of China[61574022] ; National Natural Science Foundation of China[61674021] ; National Natural Science Foundation of China[61704011]

Physics

Physics, Condensed Matter

WOS:000519786700012

Elsevier Ltd

20200408071211

Aluminum compounds ; Band structure ; Excitons ; Gallium arsenide ; III-V semiconductors ; Molecular beam epitaxy ; Molecular beams ; Optical properties ; Photoluminescence ; Quantum well lasers ; Semiconducting gallium ; Semiconductor alloys

Single Element Semiconducting Materials:712.1.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Lasers, General:744.1 ; Chemical Products Generally:804 ; Atomic and Molecular Physics:931.3 ; Solid State Physics:933

PHYSICS

2-s2.0-85078510851

Scopus

1.State Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology,Changchun,7089 Wei-Xing Road,130022,China
2.Department of Physics,University of Hong Kong,Pokfulam Road,Hong Kong
3.Department of Electrical and Electronic Engineering,South University of Science and Technology of China,Shenzhen,518055,China

Gao，Xian,Fang，Xuan,Tang，Jilong,et al. The strain, energy band and photoluminescence of GaAs0.92Sb0·08/Al0.3Ga0.7As multiple quantum wells grown on GaAs substrate[J]. SOLID STATE COMMUNICATIONS,2020,309.

Gao，Xian.,Fang，Xuan.,Tang，Jilong.,Fang，Dan.,Wang，Dengkui.,...&Wei，Zhipeng.(2020).The strain, energy band and photoluminescence of GaAs0.92Sb0·08/Al0.3Ga0.7As multiple quantum wells grown on GaAs substrate.SOLID STATE COMMUNICATIONS,309.

Gao，Xian,et al."The strain, energy band and photoluminescence of GaAs0.92Sb0·08/Al0.3Ga0.7As multiple quantum wells grown on GaAs substrate".SOLID STATE COMMUNICATIONS 309(2020).