Macroscopic piezoelectricity of an MAPbI3 semiconductor and its associated multifunctional device

Zhao，Xuefeng1; Zhang，Xinping1; Zhao，Zeen1; Wang，Yaojin1; Yin，Yuewei2; Li，Xiaoguang2; Wang，Junling3; Yuan，Guoliang1; Liu，Junming4

2023-12-15

10.1016/j.nanoen.2023.108980

Nano Energy   影响因子和分区

2211-2855

Lead halide perovskite MAPbI is an excellent semiconductor with an extremely long minority carrier lifetime, a long diffusion length, good light absorption, and a small bandgap of ∼1.55 eV. However, it is challenging to exploit the merits of its semiconductor, piezoelectric, and ferroelectric properties simultaneously. Here, an MAPbI single crystal is fully polarized by a series of pulsed electric fields, and its macroscopic piezoelectric and ferroelectric properties are confirmed. The piezoelectric d coefficient is over 7 pC/N, and the ferroelectric polarization is ∼2 μC/cm in the tetragonal MAPbI crystal at room temperature. Furthermore, two interdigital electrodes are grown on the smooth surface of the MAPbI single crystal to prepare a multifunctional device that can sense pressure through the d coefficient and/or detect incident light. The detectivity of such a photodetector is as high as 7.1 × 10 cm·Hz·W for 450-nm light. This study opens the door to developing novel multifunctional devices with single-phase piezoelectric semiconductors to realize transformations between light, force, and electrical signals.

Halide perovskite semiconductor Photodetector Piezoelectric coefficient d33 Piezoelectric semiconductor

SCI ; EI

英语

其他

WOS:001108349300001

20234314938135

Carrier lifetime ; Crystallography ; Ferroelectric materials ; Ferroelectricity ; Incident light ; Lead compounds ; Light absorption ; Perovskite ; Photons ; Piezoelectricity ; Single crystals

Minerals:482.2 ; Electricity: Basic Concepts and Phenomena:701.1 ; Dielectric Materials:708.1 ; Light/Optics:741.1 ; Atomic and Molecular Physics:931.3 ; Crystalline Solids:933.1

2-s2.0-85174448738

Scopus

1.MIIT Key Laboratory of Advanced Display Materials and Devices and School of Materials Science and Engineering,Nanjing University of Science and Technology,Nanjing,210094,China
2.Hefei National Research Center for Physical Sciences at the Microscale and Department of Physics,University of Science and Technology of China,Hefei,230026,China
3.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
4.Laboratory of Solid State Microstructures,Nanjing University,Nanjing,210093,China

Zhao，Xuefeng,Zhang，Xinping,Zhao，Zeen,et al. Macroscopic piezoelectricity of an MAPbI3 semiconductor and its associated multifunctional device[J]. Nano Energy,2023,118.

Zhao，Xuefeng.,Zhang，Xinping.,Zhao，Zeen.,Wang，Yaojin.,Yin，Yuewei.,...&Liu，Junming.(2023).Macroscopic piezoelectricity of an MAPbI3 semiconductor and its associated multifunctional device.Nano Energy,118.

Zhao，Xuefeng,et al."Macroscopic piezoelectricity of an MAPbI3 semiconductor and its associated multifunctional device".Nano Energy 118(2023).