Achieving porous germanium from both p- and n-type epitaxial Ge-on-Si via bipolar potentiostatic etching

Zhu，Ying1,2; Zhang，Yiwen1; Li，Bowen1; Xia，Guangrui (Maggie)2; Wen，Rui Tao1

2023-12-01

10.1016/j.electacta.2023.143307

Electrochimica Acta   影响因子和分区

0013-4686

Due to the large surface specific area, tunable porosity and refractive index, porous germanium (Ge) has wide applications in optoelectronics, photovoltaics, anode materials in batteries. Electrochemical etching is the most used approach to fabricate porous Ge. However, previous work focused on bulk Ge wafer etching, which is not suitable for device integration on a Si substrate, and illumination had to be used for n-type porous Ge formation. In this paper, we show that by using bipolar potentiostatic etching, porous Ge with the thickness of more than 100 nm and the pore diameter in the range of 10 to 100 nm, can be obtained from both p- and n-type Ge-on-Si layers without illumination. The pore formation mechanism is interpreted by hydrogen evolution effect and Space Charge Region (SCR) model where pore nucleation, growth and dissolution are determined by the total etching time. Our work paves the way for porous Ge applications in Si based integrated photonics and microelectronics.

Electrochemical etching Ge-on-Si Porous germanium Space charge region

SCI ; EI

英语

第一

WOS:001096552300001

20234114859783

Anodes ; Electrochemical etching ; Germanium ; Microelectronics ; Photonics ; Silicon wafers

Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Electron Tubes:714.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Optical Devices and Systems:741.3

CHEMISTRY

2-s2.0-85173332111

Scopus

1.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
2.Department of Materials Engineering,The University of British Columbia (UBC),Vancouver,V6T 1Z4,Canada

Zhu，Ying,Zhang，Yiwen,Li，Bowen,et al. Achieving porous germanium from both p- and n-type epitaxial Ge-on-Si via bipolar potentiostatic etching[J]. Electrochimica Acta,2023,470.

Zhu，Ying,Zhang，Yiwen,Li，Bowen,Xia，Guangrui ,&Wen，Rui Tao.(2023).Achieving porous germanium from both p- and n-type epitaxial Ge-on-Si via bipolar potentiostatic etching.Electrochimica Acta,470.

Zhu，Ying,et al."Achieving porous germanium from both p- and n-type epitaxial Ge-on-Si via bipolar potentiostatic etching".Electrochimica Acta 470(2023).