Cobalt doping induced emergent humps of Hall resistance in van der Waals ferromagnetic nanodevices of (Fe0.74Co0.26)3GeTe2

Wu，Zhenqi1; Niu，Wei1; Li，Wei2; Yang，Jiajv1; Gu，Kai1; Liu，Xiangjie1; Wang，Xinwei1; Chang，Shiqi1; Wei，Lujun1; Li，Feng1; Liu，Ping1; Zhang，Xiaoqian3; Ma，Jingrui4; He，Liang2; Xu，Yongbing1,2; Pu，Yong1

2023-11-06

10.1063/5.0173456

Applied Physics Letters   影响因子和分区

0003-6951

1077-3118

As a promising van der Waals (vdW) magnet, FeGeTe (FGT) has an inversion symmetry in structure, thus nominally prohibiting the generation of the Dzyaloshinskii-Moriya interaction and the resultant topological Hall effect (THE), which is manifested as hump-like features in transport. By virtue of doping, like the method of fabricating heterostructures, the crystal inversion symmetry of FGT could be broken artificially; therefore, humps of Hall resistance due to the THE are expected. However, alternative interpretations indicate inhomogeneity-induced multi-channel anomalous Hall effect (AHE) could also give rise to these humps. Here, besides the magnetic properties modified by Co doping, we report emergent humps in (FeCo)GeTe (FCGT) nanodevices. By scanning minor loops, partial anomalous Hall loops exceeding the full loop cannot be attributed to the THE, while it is in line with the multi-channel AHE scenario. These channels likely develop as a result of the Co atoms in FGT being randomly distributed, leading to multiple spatially separated magnetic regions with distinct coercive fields and magnetizations. By combing these AHE channels, the hump features in FCGT are effectively reproduced. Our work implies that the underlying multi-channel transport could also facilitate the development of versatile nanodevices utilizing the doped vdW ferromagnets.

SCI ; EI

英语

NI论文

其他

The authors thank Professor X. F. Wang in Nanjing University and Dr. W. Wang in Nanjing University of Technology for the helpful discussion. This work was supported by the National Natural Science Foundation of China (Grant Nos. 11904174, 12104235, 6187406["11904174","12104235","61874060","U1932159","61911530220"] ; National Natural Science Foundation of China["NY220203","NY220163","NY222170"] ; Jiangsu Specially-Appointed Professor program[TJ219008] ; Natural Science Foundation of Universities of Jiangsu Province[KYCX22_0919]

Physics

Physics, Applied

WOS:001099880200010

AIP Publishing

20234615049460

Cobalt ; Crystal symmetry ; Ferromagnetic materials ; Germanium alloys ; Germanium compounds ; Hall effect ; Nanostructured materials ; Van der Waals forces

Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Electricity: Basic Concepts and Phenomena:701.1 ; Magnetism: Basic Concepts and Phenomena:701.2 ; Magnetic Materials:708.4 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Atomic and Molecular Physics:931.3 ; Crystalline Solids:933.1 ; Crystal Lattice:933.1.1

PHYSICS

2-s2.0-85176143847

Scopus

1.New Energy Technology Engineering Laboratory of Jiangsu Province,School of Science,Nanjing University of Posts and Telecommunications,Nanjing,210023,China
2.School of Electronic Science and Engineering,Nanjing University,Nanjing,210023,China
3.Key Laboratory of Quantum Materials and Devices of Ministry of Education,School of Physics,Southeast University,Nanjing,211189,China
4.Key Laboratory of Energy Conversion and Storage Technologies,Southern University of Science and Technology,Shenzhen,518055,China

Wu，Zhenqi,Niu，Wei,Li，Wei,et al. Cobalt doping induced emergent humps of Hall resistance in van der Waals ferromagnetic nanodevices of (Fe0.74Co0.26)3GeTe2[J]. Applied Physics Letters,2023,123(19).

Wu，Zhenqi.,Niu，Wei.,Li，Wei.,Yang，Jiajv.,Gu，Kai.,...&Pu，Yong.(2023).Cobalt doping induced emergent humps of Hall resistance in van der Waals ferromagnetic nanodevices of (Fe0.74Co0.26)3GeTe2.Applied Physics Letters,123(19).

Wu，Zhenqi,et al."Cobalt doping induced emergent humps of Hall resistance in van der Waals ferromagnetic nanodevices of (Fe0.74Co0.26)3GeTe2".Applied Physics Letters 123.19(2023).