The micro-LED roadmap: status quo and prospects

Chien-Chung,Lin1,2,3; Yuh-Renn,Wu1,2,3; Hao-Chung,Kuo2,3; Matthew S,Wong4; Steven P,DenBaars4,5; Shuji,Nakamura4,5; Ayush,Pandey6; Zetian,Mi6; Pengfei,Tian7; Kazuhiro,Ohkawa8; Daisuke,Iida8; Tao,Wang9; Yuefei,Cai10; Jie,Bai9; Zhiyong,Yang11; Yizhou,Qian11; Shin-Tson,Wu11; Jung,Han12; Chen,Chen13; Zhaojun,Liu14; Byung-Ryool,Hyun14; Jae-Hyun,Kim15; Bongkyun,Jang15; Hyeon-Don,Kim15; Hak-Joo,Lee15,16; Ying-Tsang,Liu17; Yu-Hung,Lai17; Yun-Li,Li17; Wanqing,Meng18,19; Haoliang,Shen20; Bin,Liu18,19; Xinran,Wang18,19,20,21; Kai-ling,Liang22; Cheng-Jhih,Luo22; Yen-Hsiang,Fang22

2023-10-01

10.1088/2515-7647/acf972

JOURNAL OF PHYSICS-PHOTONICS   影响因子和分区

2515-7647

Micro light-emitting diode (micro-LED) will play an important role in the future generation of smart displays. They are found very attractive in many applications, such as maskless lithography, biosensor, augmented reality (AR)/mixed reality etc, at the same time. A monitor that can fulfill saturated color rendering, high display resolution, and fast response time is highly desirable, and the micro-LED-based technology could be our best chance to meet these requirements. At present, semiconductor-based red, green and blue micro-LED chips and color-conversion enhanced micro-LEDs are the major contenders for full-color high-resolution displays. Both technologies need revolutionary ways to perfect the material qualities, fabricate the device, and assemble the individual parts into a system. In this roadmap, we will highlight the current status and challenges of micro-LED-related issues and discuss the possible advances in science and technology that can stand up to the challenges. The innovation in epitaxy, such as the tunnel junction, the direct epitaxy and nitride-based quantum wells for red and ultraviolet, can provide critical solutions to the micro-LED performance in various aspects. The quantum scale structure, like nanowires or nanorods, can be crucial for the scaling of the devices. Meanwhile, the color conversion method, which uses colloidal quantum dot as the active material, can provide a hassle-free way to assemble a large micro-LED array and emphasis the full-color demonstration via colloidal quantum dot. These quantum dots can be patterned by porous structure, inkjet, or photo-sensitive resin. In addition to the micro-LED devices, the peripheral components or technologies are equally important. Microchip transfer and repair, heterogeneous integration with the electronics, and the novel 2D material cannot be ignored, or the overall display module will be very power-consuming. The AR is one of the potential customers for micro-LED displays, and the user experience so far is limited due to the lack of a truly qualified display. Our analysis showed the micro-LED is on the way to addressing and solving the current problems, such as high loss optical coupling and narrow field of view. All these efforts are channeled to achieve an efficient display with all ideal qualities that meet our most stringent viewing requirements, and we expect it to become an indispensable part of our daily life.

LED microLEDs road map quantum dots epitaxy color conversion mass transfer and repair

SCI ; EI ; ESCI

英语

其他

Optics ; Physics

Optics ; Physics, Applied

WOS:001102268500001

IOP Publishing

20234615066349

Augmented reality ; Color ; Display devices ; Epitaxial growth ; Light emitting diodes ; Nanocrystals ; Nanorods ; Repair ; Semiconductor quantum dots ; Sols ; Tunnel junctions

Mass Transfer:641.3 ; Semiconductor Devices and Integrated Circuits:714.2 ; Computer Peripheral Equipment:722.2 ; Computer Software, Data Handling and Applications:723 ; Light/Optics:741.1 ; Nanotechnology:761 ; Chemical Operations:802.3 ; Chemical Products Generally:804 ; Maintenance:913.5 ; Solid State Physics:933 ; Crystalline Solids:933.1 ; Crystal Growth:933.1.2

人工提交

正式出版

1.Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan
2.Department of Photonics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
3.Semiconductor Research Center, Hon-Hai Research Institute, Taipei, Taiwan
4.Materials Department, University of California, Santa Barbara, CA 93106, United States of America
5.Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, United States of America
6.Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, MI 48109, United States of America
7.School of Information Science and Technology, Fudan University, Shanghai 200433, People’s Republic of China
8.King Abdullah University of Science and Technology, CEMSE Division, KAUST, Thuwal 23955-6900, Saudi Arabia
9.Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD, United Kingdom
10.Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China
11.College of Optics and Photonics, University of Central Florida, Orlando, FL 32816, United States of America
12.Department of Electrical Engineering, Yale University, 15 Prospect Street, New Haven, CT 06520, United States of America
13.Saphlux Inc, Branford, CT 06405, United States of America
14.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, People’s Republic of China
15.KIMM, Korea Institute of Machinery and Materials, Daejeon 34103, Republic of Korea
16.CAMM, Centre for Advanced Meta-Materials, Daejeon 34103, Republic of Korea
17.PlayNitride Inc, No. 13, Kezhong Road, Zhunan Township, Miaoli 350401, Taiwan
18.National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People’s Republic of China
19.Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing, People’s Republic of China
20.Suzhou Laboratory, Suzhou, People’s Republic of China
21.School of Integrated Circuits, Nanjing University, Suzhou, People’s Republic of China
22.Industrial Technology Research Institute, Chutung, Hsinchu 310401, Taiwan

Chien-Chung,Lin,Yuh-Renn,Wu,Hao-Chung,Kuo,et al. The micro-LED roadmap: status quo and prospects[J]. JOURNAL OF PHYSICS-PHOTONICS,2023,5(4):042502.

Chien-Chung,Lin.,Yuh-Renn,Wu.,Hao-Chung,Kuo.,Matthew S,Wong.,Steven P,DenBaars.,...&Yen-Hsiang,Fang.(2023).The micro-LED roadmap: status quo and prospects.JOURNAL OF PHYSICS-PHOTONICS,5(4),042502.

Chien-Chung,Lin,et al."The micro-LED roadmap: status quo and prospects".JOURNAL OF PHYSICS-PHOTONICS 5.4(2023):042502.