| 题名 | Hole-Induced Degradation in ${E -Mode GaN MIS-FETs: Impact of Substrate Terminations |
| 作者 | |
| 通讯作者 | Hua，Mengyuan |
| 发表日期 | 2020-01
|
| DOI | |
| 发表期刊 | |
| ISSN | 1557-9646
|
| 卷号 | 67期号:1页码:217-223 |
| 关键词 | |
| 相关链接 | [IEEE记录] |
| 收录类别 | |
| 学校署名 | 第一
; 通讯
|
| EI入藏号 | 20200308036191
|
| EI主题词 | III-V semiconductors
; MIS devices
; Wide band gap semiconductors
; Semiconducting gallium compounds
; Gallium nitride
; Metal insulator boundaries
; Threshold voltage
; Electric grounding
; Semiconductor insulator boundaries
; Transistors
|
| EI分类号 | Electricity: Basic Concepts and Phenomena:701.1
; Semiconducting Materials:712.1
; Compound Semiconducting Materials:712.1.2
; Semiconductor Devices and Integrated Circuits:714.2
|
| ESI学科分类 | ENGINEERING
|
| 来源库 | IEEE
|
| 全文链接 | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8930629 |
| 引用统计 |
被引频次[WOS]：12
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/61512 |
| 专题 | 工学院_电子与电气工程系 |
| 作者单位 | 1.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China 2.Department of Electronic and Computer Engineering,Hong Kong University of Science and Technology,Kowloon,Hong Kong |
| 第一作者单位 | 电子与电气工程系 |
| 通讯作者单位 | 电子与电气工程系 |
| 第一作者的第一单位 | 电子与电气工程系 |
| 推荐引用方式 GB/T 7714 |
Hua，Mengyuan,Yang，Song,Wei，Jin,et al. Hole-Induced Degradation in ${E -Mode GaN MIS-FETs: Impact of Substrate Terminations[J]. IEEE Transactions on Electron Devices,2020,67(1):217-223.
|
| APA |
Hua，Mengyuan,Yang，Song,Wei，Jin,Zheng，Zheyang,He，Jiabei,&Chen，Kevin J..(2020).Hole-Induced Degradation in ${E -Mode GaN MIS-FETs: Impact of Substrate Terminations.IEEE Transactions on Electron Devices,67(1),217-223.
|
| MLA |
Hua，Mengyuan,et al."Hole-Induced Degradation in ${E -Mode GaN MIS-FETs: Impact of Substrate Terminations".IEEE Transactions on Electron Devices 67.1(2020):217-223.
|
| 条目包含的文件 | 条目无相关文件。 | |||||
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