Ni Single-Atoms Based Memristors with Ultrafast Speed and Ultralong Data Retention

Li, Hua-Xin1,2; Li, Qing-Xiu1; Li, Fu-Zhi3; Liu, Jia-Peng4; Gong, Guo-Dong1,2; Zhang, Yu-Qi1; Leng, Yan-Bing1; Sun, Tao1; Zhou, Ye5; Han, Su-Ting2,6

2023-12-01

10.1002/adma.202308153

ADVANCED MATERIALS   影响因子和分区

0935-9648

1521-4095

Memristor with low-power, high density, and scalability fulfills the requirements of the applications of the new computing system beyond Moore's law. However, there are still nonideal device characteristics observed in the memristor to be solved. The important observation is that retention and speed are correlated parameters of memristor with trade off against each other. The delicately modulating distribution and trapping level of defects in electron migration-based memristor is expected to provide a compromise method to address the contradictory issue of improving both switching speed and retention capability. Here, high-performance memristor based on the structure of ITO/Ni single-atoms (NiSAs/N-C)/Polyvinyl pyrrolidone (PVP)/Au is reported. By utilizing well-distributed trapping sites, small tunneling barriers/distance and high charging energy, the memristor with an ultrafast switching speed of 100 ns, ultralong retention capability of 10(6) s, a low set voltage (V-set) of approximate to 0.7 V, a substantial ON/OFF ration of 10(3), and low spatial variation in cycle-to-cycle (500 cycles) and device-to-device characteristics (128 devices) is demonstrated. On the premise of preserving the strengths of a fast switching speed, this memristor exhibits ultralong retention capability comparable to the commercialized flash memory. Finally, a memristor ratioed logic-based combinational memristor array to realize the one-bit full adder is further implemented.

memristors retention time single atoms materials switching speed

SCI ; EI

英语

NI论文

其他

NTUT-SZU Joint Research Program["62122055","62074104","61974093"] ; NSFC Program["20200804172625001","RCYX20200714114524157","JCYJ20220818100206013"]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:001113826800001

WILEY-V C H VERLAG GMBH

20234915171032

Atoms ; Computation theory ; Economic and social effects ; Flash memory

Semiconductor Devices and Integrated Circuits:714.2 ; Computer Theory, Includes Formal Logic, Automata Theory, Switching Theory, Programming Theory:721.1 ; Data Storage, Equipment and Techniques:722.1 ; Atomic and Molecular Physics:931.3 ; Social Sciences:971

MATERIALS SCIENCE

2-s2.0-85178489445

Web of Science

1.Shenzhen Univ, Inst Microscale Optoelect, Shenzhen 518060, Peoples R China
2.Shenzhen Univ, Coll Elect & Informat Engn, Shenzhen 518060, Peoples R China
3.Southern Univ Sci & Technol, Dept Chem, Shenzhen 518055, Peoples R China
4.Sun Yat Sen Univ Shenzhen, Sch Adv Energy, Shenzhen 518107, Peoples R China
5.Shenzhen Univ, Inst Adv Study, Shenzhen 518060, Peoples R China
6.Hong Kong Polytech Univ, Dept Appl Biol & Chem Technol, Hung Hom, Kowloon, Hong Kong 999077, Peoples R China

Li, Hua-Xin,Li, Qing-Xiu,Li, Fu-Zhi,et al. Ni Single-Atoms Based Memristors with Ultrafast Speed and Ultralong Data Retention[J]. ADVANCED MATERIALS,2023,36(6).

Li, Hua-Xin.,Li, Qing-Xiu.,Li, Fu-Zhi.,Liu, Jia-Peng.,Gong, Guo-Dong.,...&Han, Su-Ting.(2023).Ni Single-Atoms Based Memristors with Ultrafast Speed and Ultralong Data Retention.ADVANCED MATERIALS,36(6).

Li, Hua-Xin,et al."Ni Single-Atoms Based Memristors with Ultrafast Speed and Ultralong Data Retention".ADVANCED MATERIALS 36.6(2023).