A 2D Heterostructure-Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing

Zha, Jiajia1; Xia, Yunpeng2; Shi, Shuhui3,4; Huang, Haoxin2; Li, Siyuan5; Qian, Chen5; Wang, Huide1; Yang, Peng6; Zhang, Zhuomin7; Meng, You1; Wang, Wei1; Yang, Zhengbao7,8; Yu, Hongyu4; Ho, Johnny C.1; Wang, Zhongrui3; Tan, Chaoliang3

2023-12-01

10.1002/adma.202308502

ADVANCED MATERIALS   影响因子和分区

0935-9648

1521-4095

The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two-dimensional (2D) materials in recent years. As a rising van der Waals (vdW) p-type Weyl semiconductor with many intriguing properties, tellurium (Te) has been widely used in advanced electronics/optoelectronics. However, its application in floating gate (FG) memory devices for information processing has never been explored. Herein, an electronic/optoelectronic FG memory device enabled by Te-based 2D vdW heterostructure for multimodal reservoir computing (RC) is reported. When subjected to intense electrical/optical stimuli, the device exhibits impressive nonvolatile electronic memory behaviors including approximate to 10(8) extinction ratio, approximate to 100 ns switching speed, >4000 cycles, >4000-s retention stability, and nonvolatile multibit optoelectronic programmable characteristics. When the input stimuli weaken, the nonvolatile memory degrades into volatile memory. Leveraging these rich nonlinear dynamics, a multimodal RC system with high recognition accuracy of 90.77% for event-type multimodal handwritten digit-recognition is demonstrated.

2D van der Waals heterostructures floating gate multimodal reservoir computing optoelectronic memory devices tellurium nanoflake

SCI ; EI

英语

NI论文

其他

National Natural Science Foundation of China - Excellent Young Scientists Fund (Hong Kong and Macau)["62122004","CityU RFS2021-1S04"] ; null[27206321] ; null[17205922]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:001112730500001

WILEY-V C H VERLAG GMBH

20234915151596

Character recognition ; Data handling ; Optoelectronic devices ; Tellurium ; Tellurium compounds ; Van der Waals forces

Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconductor Devices and Integrated Circuits:714.2 ; Data Processing and Image Processing:723.2 ; Optical Devices and Systems:741.3 ; Physical Chemistry:801.4 ; Atomic and Molecular Physics:931.3

MATERIALS SCIENCE

2-s2.0-85178202138

Web of Science

1.City Univ Hong Kong, Dept Mat Sci & Engn, Hong Kong 999077, Peoples R China
2.City Univ Hong Kong, Dept Elect Engn, Hong Kong 999077, Peoples R China
3.Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong 999077, Peoples R China
4.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Guangdong, Peoples R China
5.City Univ Hong Kong, Dept Chem, Hong Kong 999077, Peoples R China
6.Shenzhen Technol Univ, Coll Integrated Circuits & Optoelect Chips, Shenzhen 518118, Guangdong, Peoples R China
7.City Univ Hong Kong, Dept Mech Engn, Hong Kong 999077, Peoples R China
8.Hong Kong Univ Sci & Technol, Dept Mech & Aerosp Engn, Hong Kong 999077, Peoples R China

Zha, Jiajia,Xia, Yunpeng,Shi, Shuhui,et al. A 2D Heterostructure-Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing[J]. ADVANCED MATERIALS,2023,36(3).

Zha, Jiajia.,Xia, Yunpeng.,Shi, Shuhui.,Huang, Haoxin.,Li, Siyuan.,...&Tan, Chaoliang.(2023).A 2D Heterostructure-Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing.ADVANCED MATERIALS,36(3).

Zha, Jiajia,et al."A 2D Heterostructure-Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing".ADVANCED MATERIALS 36.3(2023).