Optimizing ZnO-Quantum Dot Interface with Thiol as Ligand Modification for High-Performance Quantum Dot Light-Emitting Diodes

Jia, Siqi1,2,3,4; Hu, Menglei1,2,5; Gu, Mi1,2; Ma, Jingrui1,2; Li, Depeng1,2; Xiang, Guohong1,2; Liu, Pai1,2,6; Wang, Kai1,2; Servati, Peyman5; Ge, Wei Kun1,2; Sun, Xiao Wei1,2

2023-11-01

10.1002/smll.202307298

SMALL   影响因子和分区

1613-6810

1613-6829

As the electron transport layer in quantum dot light-emitting diodes (QLEDs), ZnO suffers from excessive electrons that lead to luminescence quenching of the quantum dots (QDs) and charge-imbalance in QLEDs. Therefore, the interplay between ZnO and QDs requires an in-depth understanding. In this study, DFT and COSMOSL simulations are employed to investigate the effect of sulfur atoms on ZnO. Based on the simulations, thiol ligands (specifically 2-hydroxy-1-ethanethiol) to modify the ZnO nanocrystals are adopted. This modification alleviates the excess electrons without causing any additional issues in the charge injection in QLEDs. This modification strategy proves to be effective in improving the performance of red-emitting QLEDs, achieving an external quantum efficiency of over 23% and a remarkably long lifetime T-95 of >12 000 h at 1000 cd m(-2). Importantly, the relationship between ZnO layers with different electronic properties and their effect on the adjacent QDs through a single QD measurement is investigated. These findings show that the ZnO surface defects and electronic properties can significantly impact the device performance, highlighting the importance of optimizing the ZnO-QD interface, and showcasing a promising ligand strategy for the development of highly efficient QLEDs.

ligand modification quantum dot light-emitting diodes (QLEDs) single quantum dots ZnO

SCI ; EI

英语

第一 ; 通讯

This work was supported by the National Key Research and Development Program of China (No. 2021YFB3602703, 2022YFB3606504, and 2022YFB3602903), National Natural Science Foundation of China (No. 62122034), Guangdong University Key Laboratory for Advanced Qu["2021YFB3602703","2022YFB3606504","2022YFB3602903"] ; National Key Research and Development Program of China[62122034] ; National Natural Science Foundation of China[2017KSYS007] ; Guangdong University Key Laboratory for Advanced Quantum Dot Displays[ZDSYS201707281632549] ; Shenzhen Key Laboratory for Advanced Quantum Dot Displays[JCYJ20220818100411025] ; Shenzhen Science and Technology Program[XMHT20220114005] ; Shenzhen Development and Reform Commission Project[2023M731826]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:001106045800001

WILEY-V C H VERLAG GMBH

20234615070567

Electron transport properties ; Electronic properties ; Graphene quantum dots ; II-VI semiconductors ; Nanocrystals ; Organic light emitting diodes (OLED) ; Quantum chemistry ; Semiconductor quantum dots ; Surface defects ; Zinc oxide

Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Inorganic Compounds:804.2 ; Crystalline Solids:933.1 ; Materials Science:951

Web of Science

1.Southern Univ Sci & Technol, Inst Nanosci & Applicat, Shenzhen 518055, Peoples R China
2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
3.Henan Acad Sci, Inst Adv Displays & Imaging, Zhengzhou 450046, Peoples R China
4.Peng Cheng Lab, Shenzhen 518038, Peoples R China
5.Univ British Columbia, Dept Elect & Comp Engn, Vancouver, BC V6T 1Z4, Canada
6.Southern Univ Sci & Technol, Shenzhen Key Lab Deep Subwavelength Scale Photon, Shenzhen 518055, Peoples R China

Jia, Siqi,Hu, Menglei,Gu, Mi,et al. Optimizing ZnO-Quantum Dot Interface with Thiol as Ligand Modification for High-Performance Quantum Dot Light-Emitting Diodes[J]. SMALL,2023.

Jia, Siqi.,Hu, Menglei.,Gu, Mi.,Ma, Jingrui.,Li, Depeng.,...&Sun, Xiao Wei.(2023).Optimizing ZnO-Quantum Dot Interface with Thiol as Ligand Modification for High-Performance Quantum Dot Light-Emitting Diodes.SMALL.

Jia, Siqi,et al."Optimizing ZnO-Quantum Dot Interface with Thiol as Ligand Modification for High-Performance Quantum Dot Light-Emitting Diodes".SMALL (2023).