Amorphous N-doped InSnZnO thin films deposited by RF sputtering for thin-film transistor application

Li, Zhi-Yue1,2,3; Song, Shu-Mei1; Wang, Wanxia4; Dai, Ming-Jiang5; Lin, Song-Sheng5; Chen, Ting-Yong2; Sun, Hui1

2023-10-01

10.1039/d3ma00500c

MATERIALS ADVANCES   影响因子和分区

2633-5409

N-doped InSnZnO (ITZO:N) thin films as the active layer of thin film transistors (TFTs) were prepared using radio frequency (RF) magnetron sputtering at room temperature. The influence of RF power on the microstructure and optical properties of films was investigated. The relationship between the active layer quality and the TFT's electrical properties was also studied. The results show that no evident impacts of RF power are observed on the optical transmittance in the visible range of amorphous ITZO:N thin films. Their optical band gaps increase from 3.44 to 3.54 eV. An appropriate RF power can enhance ITZO:N film's quality, and reduce the interface state density, which is beneficial to improving the carrier concentration of ITZO:N TFTs. Then, the device's performance is optimized. The threshold voltage of TFTs shows a negative shift as the RF power gradually increases. When the RF power is 60 W, the ITZO:N thin film is amorphous with a dense microstructure. The corresponding TFT device exhibits optimal electrical characteristics. Its field-effect mobility, on/off ratio and subthreshold swing are 14.66 cm(2) V-1 s(-1), >106 and 0.7 V dec(-1), respectively.

ESCI

英语

其他

We gratefully acknowledge the National Key Ramp;D Program of China (2022YFB3706600 and 2022YFE0123000) and the National Natural Science Foundation of China (no. 62004117) and also thank the Physical-Chemical Materials Analytical amp; Testing Center of Sh["2022YFB3706600","2022YFE0123000"] ; National Key Ramp;D Program of China[62004117]

Materials Science

Materials Science, Multidisciplinary

WOS:001101415400001

ROYAL SOC CHEMISTRY

Web of Science

1.Shandong Univ, Sch Space Sci & Phys, Weihai 264209, Peoples R China
2.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
3.Univ Hong Kong, Dept Phys, Hong Kong 999077, Peoples R China
4.Shandong Univ, Sch Mech Elect & Informat Engn, Weihai 264200, Peoples R China
5.Guangdong Inst New Mat, 363 Changxing Rd, Guangzhou 510651, Peoples R China

Li, Zhi-Yue,Song, Shu-Mei,Wang, Wanxia,et al. Amorphous N-doped InSnZnO thin films deposited by RF sputtering for thin-film transistor application[J]. MATERIALS ADVANCES,2023,4(24).

Li, Zhi-Yue.,Song, Shu-Mei.,Wang, Wanxia.,Dai, Ming-Jiang.,Lin, Song-Sheng.,...&Sun, Hui.(2023).Amorphous N-doped InSnZnO thin films deposited by RF sputtering for thin-film transistor application.MATERIALS ADVANCES,4(24).

Li, Zhi-Yue,et al."Amorphous N-doped InSnZnO thin films deposited by RF sputtering for thin-film transistor application".MATERIALS ADVANCES 4.24(2023).