In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film

Cai，Xiangbin1,2; Chen，Chao1; Xie，Lin3; Wang，Changan4,5; Gui，Zixin1; Gao，Yuan6; Kentsch，Ulrich4; Zhou，Guofu1; Gao，Xingsen1; Chen，Yu7; Zhou，Shengqiang4; Gao，Weibo2; Liu，Jun Ming1,8; Zhu，Ye9; Chen，Deyang1

2023-12-01

10.1038/s41467-023-44091-4

Nature Communications   影响因子和分区

2041-1723

The deterministic creation and modification of domain walls in ferroelectric films have attracted broad interest due to their unprecedented potential as the active element in non-volatile memory, logic computation and energy-harvesting technologies. However, the correlation between charged and antiphase states, and their hybridization into a single domain wall still remain elusive. Here we demonstrate the facile fabrication of antiphase boundaries in BiFeO thin films using a He-ion implantation process. Cross-sectional electron microscopy, spectroscopy and piezoresponse force measurement reveal the creation of a continuous in-plane charged antiphase boundaries around the implanted depth and a variety of atomic bonding configurations at the antiphase interface, showing the atomically sharp 180° polarization reversal across the boundary. Therefore, this work not only inspires a domain-wall fabrication strategy using He-ion implantation, which is compatible with the wafer-scale patterning, but also provides atomic-scale structural insights for its future utilization in domain-wall nanoelectronics.

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1.Guangdong Provincial Key Laboratory of Optical Information Materials and Technology,and Institute for Advanced Materials,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou,510006,China
2.Division of Physics and Applied Physics,School of Physical and Mathematical Sciences,Nanyang Technological University,Singapore,637371,Singapore
3.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
4.Helmholtz-Zentrum Dresden-Rossendorf,Institute of Ion Beam Physics and Materials Research,Dresden,01328,Germany
5.School of Electronics & Communication,Guangdong Mechanical and Electrical Polytechnic,Guangzhou,510515,China
6.State Key Laboratory of Nuclear Physics and Technology,School of Physics,Peking University,Beijing,100871,China
7.Institute of High Energy Physics,Chinese Academy of Sciences,Beijing,100049,China
8.Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures,Nanjing University,Nanjing,210093,China
9.Department of Applied Physics,Research Institute for Smart Energy,The Hong Kong Polytechnic University,Hong Kong

Cai，Xiangbin,Chen，Chao,Xie，Lin,et al. In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film[J]. Nature Communications,2023,14(1).

Cai，Xiangbin.,Chen，Chao.,Xie，Lin.,Wang，Changan.,Gui，Zixin.,...&Chen，Deyang.(2023).In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film.Nature Communications,14(1).

Cai，Xiangbin,et al."In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film".Nature Communications 14.1(2023).