Synthesis of Co-Doped MoS2 Monolayers with Enhanced Valley Splitting

Zhou，Jiadong1; Lin，Junhao2,3; Sims，Hunter4,5; Jiang，Chongyun6,7; Cong，Chunxiao6,8; Brehm，John A.4,5; Zhang，Zhaowei6; Niu，Lin1; Chen，Yu6; Zhou，Yao6; Wang，Yanlong6; Liu，Fucai1; Zhu，Chao1; Yu，Ting6; Suenaga，Kazu2; Mishra，Rohan9; Pantelides，Sokrates T.4,5; Zhu，Zhen Gang10,11; Gao，Weibo6; Liu，Zheng1,12,13; Zhou，Wu11,14

2020

10.1002/adma.201906536

ADVANCED MATERIALS   影响因子和分区

0935-9648

1521-4095

Internal magnetic moments induced by magnetic dopants in MoS monolayers are shown to serve as a new means to engineer valley Zeeman splitting (VZS). Specifically, successful synthesis of monolayer MoS doped with the magnetic element Co is reported, and the magnitude of the valley splitting is engineered by manipulating the dopant concentration. Valley splittings of 3.9, 5.2, and 6.15 meV at 7 T in Co-doped MoS with Co concentrations of 0.8%, 1.7%, and 2.5%, respectively, are achieved as revealed by polarization-resolved photoluminescence (PL) spectroscopy. Atomic-resolution electron microscopy studies clearly identify the magnetic sites of Co substitution in the MoS lattice, forming two distinct types of configurations, namely isolated single dopants and tridopant clusters. Density functional theory (DFT) and model calculations reveal that the observed enhanced VZS arises from an internal magnetic field induced by the tridopant clusters, which couples to the spin, atomic orbital, and valley magnetic moment of carriers from the conduction and valence bands. The present study demonstrates a new method to control the valley pseudospin via magnetic dopants in layered semiconducting materials, paving the way toward magneto-optical and spintronic devices.

2D materials chemical vapor deposition Co doping MoS2 valley splitting

SCI ; EI

英语

NI期刊

其他

Office of Science of the U.S. Department of Energy[DE-AC02-05CH11231]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000511258700001

WILEY-V C H VERLAG GMBH

20200608149437

Monolayers ; Chemical vapor deposition ; Landforms ; Photoluminescence spectroscopy ; Cobalt ; Density functional theory ; Layered semiconductors ; Magnetic moments ; Quantum chemistry

Geology:481.1 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Magnetism: Basic Concepts and Phenomena:701.2 ; Semiconducting Materials:712.1 ; Optical Devices and Systems:741.3 ; Physical Chemistry:801.4 ; Chemical Reactions:802.2 ; Probability Theory:922.1 ; Atomic and Molecular Physics:931.3 ; Quantum Theory; Quantum Mechanics:931.4 ; Optical Variables Measurements:941.4

MATERIALS SCIENCE

2-s2.0-85079040078

Scopus

1.School of Materials Science and Engineering,Nanyang Technological University,Singapore,639798,Singapore
2.National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba,305–8565,Japan
3.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
4.Department of Physics and Astronomy,Vanderbilt University,Nashville,37235,United States
5.Materials Science and Technology Division,Oak Ridge National Lab,Oak Ridge,37831,United States
6.Division of Physics and Applied Physics,School of Physical and Mathematical Sciences,Nanyang Technological University,Singapore,637371,Singapore
7.College of electronic information and optical engineering,Nankai University,Tianjin,300350,China
8.State Key Laboratory of ASIC & System,School of Information Science and Technology,Fudan University,Shanghai,200433,China
9.Department of Mechanical Engineering and Materials Science and Institute of Materials Science and Engineering,Washington University in St. Louis,St. Louis,63130,United States
10.School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Science,Beijing,100049,China
11.CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing,100049,China
12.Centre for Micro-/Nano-electronics (NOVITAS),School of Electrical & Electronic Engineering,Nanyang Technological University,Singapore,50 Nanyang Avenue,639798,Singapore
13.CINTRA CNRS/NTU/THALES,UMI 3288,Research Techno Plaza,Singapore,50 Nanyang Drive, Border X Block, Level 6,637553,Singapore
14.School of Physical Sciences and CAS Key Laboratory of Vacuum Sciences,University of Chinese Academy of Sciences,Beijing,100049,China

Zhou，Jiadong,Lin，Junhao,Sims，Hunter,et al. Synthesis of Co-Doped MoS2 Monolayers with Enhanced Valley Splitting[J]. ADVANCED MATERIALS,2020,32(11).

Zhou，Jiadong.,Lin，Junhao.,Sims，Hunter.,Jiang，Chongyun.,Cong，Chunxiao.,...&Zhou，Wu.(2020).Synthesis of Co-Doped MoS2 Monolayers with Enhanced Valley Splitting.ADVANCED MATERIALS,32(11).

Zhou，Jiadong,et al."Synthesis of Co-Doped MoS2 Monolayers with Enhanced Valley Splitting".ADVANCED MATERIALS 32.11(2020).