南方科技大学知识苑(SUSTech KC): An Improved RC Network Negative Voltage Gate Driver Circuit for GaN Devices

题名	An Improved RC Network Negative Voltage Gate Driver Circuit for GaN Devices
作者	Jianing Liang 1; Yue Wu 2 ; Huyong Ling 1; Tianfu Sun 1; Xueqiang Zhang 3; Dingfang Lin 1
DOI	10.1109/ICEMS59686.2023.10345031
发表日期	2023
ISSN	2640-7841
ISBN	979-8-3503-1759-6
会议录名称	2023 26th International Conference on Electrical Machines and Systems (ICEMS)
页码	3544-3549
会议日期	5-8 Nov. 2023
会议地点	Zhuhai, China
摘要	Gallium Nitride (GaN) power devices have attracted attention for power electronics applications, because of their high power density and capacity for higher frequency operation. However, the crosstalk issue of the half bridge is easy to damage to the power circuit. When the reverse current passes through the GaN, the reverse conduction loss of the GaN device will increase significantly as the negative gate voltage increases, which will affect the efficiency of the entire power circuit.This paper is proposed an improved RC network negative voltage gate driver circuit for GaN Devices. It can provide a passive negative voltage when GaN is closed. A proposed RC circuit is used to control turn on of the mosfet to reduce the negative voltage region the switch loss. So the proposed circuit can improve the crosstalk and efficiency. Some simulation and experimental results are done to verify the performance of proposed gate drive circuit.
关键词	Negative voltage drive. GaN HEMT. motor drive
学校署名	其他
相关链接	[IEEE记录]
收录类别	EI
EI入藏号	20240315393806
EI主题词	Crosstalk ; Efficiency ; Electric drives ; High electron mobility transistors ; III-V semiconductors ; MOSFET devices ; Power semiconductor devices ; Timing circuits ; Wide band gap semiconductors
EI分类号	Semiconducting Materials:712.1 ; Pulse Circuits:713.4 ; Semiconductor Devices and Integrated Circuits:714.2 ; Production Engineering:913.1
来源库	IEEE
全文链接	https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10345031
引用统计
成果类型	会议论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/633271
专题	南方科技大学先进技术研究院
作者单位	1.Shenzhen Institutes of Advanced Technology, Chinese University of Hong Kong, Shenzhen, China 2.Southern University of Science and Technology, Shenzhen Institutes of Advanced Technology, Shenzhen, China 3.BASiC Semiconductor Ltd, Shenzhen, China
推荐引用方式 GB/T 7714	Jianing Liang,Yue Wu,Huyong Ling,et al. An Improved RC Network Negative Voltage Gate Driver Circuit for GaN Devices[C],2023:3544-3549.