Investigation of the leakage mechanism in multi-channel GaN-on-Si SBDs

Wensong Zou; Jiawei Chen; Junbo Liu; Jun Ma

2023-09-19

10.35848/1347-4065/acf1e9

Japanese Journal of Applied Physics   影响因子和分区

0021-4922

1347-4065

This work presented the reverse leakage current (I-R) mechanisms in multi-channel GaN-on-Si Schottky barrier diodes (SBDs). The device showed excellent performances in both ON and OFF-states thanks to the advanced multi-channel tri-gate architecture. The I-R is dominated by thermal field emission at 25 degrees C-75 degrees C before pinch-off of the 2-dimensional electron gas (2DEG) channel in the Schottky region, due to the thinned Schottky barrier, which turned to be thermal emission (TE)-dominated under further elevated temperatures resulted from the small Schottky barrier height. Once the 2DEG channel is pinched off by the tri-anode, the I-R is firstly dominated by Poole-Frenkel emission and then is trap-assisted tunneling after the full depletion of the channels beneath the field plates. These results are supported by excellent consistency between experimental results and theoretical models, offering a key understanding of multi-channel SBDs and shedding lights on this promising multi-channel technology for future energy conversion.(c) 2023 The Japan Society of Applied Physics

leakage mechanism GaN-on-Si SBDs multi-channel tri-gate

SCI ; EI

英语

第一 ; 通讯

This work was supported in part by the National Natural Science Foundation of China (NSFC) on Grant 62104092 and in part by the Natural Science Foundation of Guangdong Province under Grant 2021A1515011952. The author would like to thank staff in Southern U[62104092] ; National Natural Science Foundation of China (NSFC)[2021A1515011952]

Physics

Physics, Applied

WOS:001144970900001

IOP Publishing Ltd

20234114854941

Gallium nitride ; III-V semiconductors ; Silicon ; Two dimensional electron gas

Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2

PHYSICS

人工提交

Department of Electronic and Electrical Engineering, Southern University of Science and Technology (SUSTech)

Wensong Zou,Jiawei Chen,Junbo Liu,et al. Investigation of the leakage mechanism in multi-channel GaN-on-Si SBDs[J]. Japanese Journal of Applied Physics,2023,62(9).

Wensong Zou,Jiawei Chen,Junbo Liu,&Jun Ma.(2023).Investigation of the leakage mechanism in multi-channel GaN-on-Si SBDs.Japanese Journal of Applied Physics,62(9).

Wensong Zou,et al."Investigation of the leakage mechanism in multi-channel GaN-on-Si SBDs".Japanese Journal of Applied Physics 62.9(2023).