基于等离子体诱导原子迁移效应的 SiO2表面与界面抛光方法研究

现代光学系统对光学零件表面质量的要求不断提升，制造精度正由纳米级向原子级转化，以满足光刻技术、空间光学、高能激光系统等一系列高技术领域对于制造精度的苛刻需求。现有的原子及近原子尺度表面创成手段仍存在着原子尺度加工机理不明、可控性与可重复性差、精度与表面完整性逼近材料极限等一系列挑战，因此探索基于新原理的原子及近原子尺度制造工艺十分迫切。基于对大气电感耦合等离子体诱发材料表面原子迁移与重构效应的发现，本论文提出等离子体诱导原子迁移制造（PAMM）技术，以期获得原子级超光滑表面，并修复表面和亚表面损伤。等离子体能量高效馈入熔石英光学元件表面，表面原子吸收足够能量形成弱吸附的自由态原子。伴随着高位点的自由态原子不断地向低位点迁移，最终完成原子级超光滑表面高效创成。

本论文以等离子体诱发的表面原子迁移与重构效应为核心，研究PAMM工艺生成原子级光学表面的内在机理、工艺方法和控制规律，揭示基于PAMM的损伤修复规律，探索界面重构的新现象和新机理，将PAMM技术与离子束修形技术高效融合，实现全空间频域误差一致收敛的加工目标。具体研究内容包括以下几个方面：

（1）构建大气电感耦合等离子体驻留熔石英元件表面的多物理场耦合和对熔石英表面的传热模型，研究了等离子体与石英元件间能量传递过程，分析表面气体的温度分布和流速分布规律；构建恒温张力驱动熔石英表面材料蠕变流模型，研究宏观尺度熔融材料流动规律，分析超光滑表面生成机理；构建自由态原子近表面吸附和批量表面原子迁移的微观动力学模型，研究微观尺度原子迁移规律和机制。仿真结果表明，等离子体辐照后表面形成熔池，表面张力作用驱动内部粘性流体蠕变流动，高位点原子基于原子自由度最小化原理向低位点发生持续迁移，实现辐照区域内的有效抛光和损伤修复，为PAMM工艺研究奠定理论基础。

（2）实验探索了熔石英光学元件的原子级超光滑表面创成机理，并对表面形貌进行跨尺度分析。PAMM工艺实验表明，等离子体稳定、瞬时地馈入能量后，熔石英表面高位点原子优先断键形成自由态原子并向低位点批量迁移，表面不断重构直至形成光滑结构。射频功率1000 W时，PAMM抛光10 min可实现等离子体辐照区域的研磨表面向原子级超光滑表面高效转化，表面粗糙度在微米尺度到毫米尺度上均达到Sa<1 nm，实现光学元件表面亚纳米级精度加工。

（3）融合等离子体各向同性刻蚀和原子迁移，研究了低损伤、超光滑熔石英光学表面高效创成机理。各向同性刻蚀高效地去除深层亚表面损伤，原子迁移抛光可进一步将粗糙的蚀刻表面转化为超光滑表面，表面粗糙度降至Sa 0.15 nm。相比传统超精密抛光表面，PAMM抛光表面的激光诱导损伤阈值增大约15 %，提升了熔石英光学元件在高能激光系统的应用寿命。

（4）提出了等离子体诱导原子迁移抛光技术和离子束修形技术相结合的复合光学制造工艺，研究了熔石英光学表面全空间频域误差的收敛机制。通过研究工艺参数和加工周期等因素对熔石英光学表面不同空间频率误差的影响，掌握高精度表面演变规律，探索全空间频域误差一致收敛的加工工艺。在扫描模式下，原子迁移抛光基于表面的微熔效应，高效地实现了原子级超光滑熔石英表面，完成高频误差快速收敛，并修复了表面/亚表面损伤。进一步的离子束修形基于原子的逐层去除完成了表面低频误差收敛。研究了等离子体原子诱导的迁移抛光和离子束修形在不同频段误差收敛中的互补性关系，优化工艺参数条件下，低频面形误差收敛至RMS 3.829 nm，中频误差降低至Sa<0.2 nm，高频误差降低至Sa<0.1 nm。

（5）拓展了原子迁移效应在SiO₂/Si界面原子尺度调控的应用。研究了等离子体辐照作用下SiO₂/Si界面中不饱和Si原子的迁移效应，揭示了SiO₂/Si界面的重构规律。掌握了基于射频功率的界面形貌演变与调控方法，在此基础上，基于间歇降低功率模式，获得了原子级超平整的SiO₂/Si界面结构（Sa<0.1 nm），为半导体界面调控提供了新的技术方案。

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