南方科技大学知识苑(SUSTech KC): Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi<sub>2</sub>Te<sub>4</sub> thin films

题名	Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi₂Te₄ thin films
作者	Bai, Yunhe 1; Li, Yuanzhao 1; Luan, Jianli 1; Liu, Ruixuan 1; Song, Wenyu 1; Chen, Yang 1; Ji, Peng-Fei 1; Zhang, Qinghua 7; Meng, Fanqi 6; Tong, Bingbing 3; Li, Lin 3; Jiang, Yuying 1; Gao, Zongwei 3; Gu, Lin 6; Zhang, Jinsong 1,2,5; Wang, Yayu 1,2,5; Xue, Qi-Kun1,2,3,4 ; He, Ke 1,2,3,5; Feng, Yang 3; Feng, Xiao 1,2,3,5
通讯作者	He, Ke; Feng, Yang; Feng, Xiao
发表日期	2023-07-01
DOI	10.1093/nsr/nwad189
发表期刊	NATIONAL SCIENCE REVIEW 影响因子和分区
ISSN	2095-5138
EISSN	2053-714X
卷号	11 期号:2
摘要	The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to the high-temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi2Te4 thin flakes, it remains a big challenge to achieve molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films even close to the quantized regime. In this work, we report the realization of quantized anomalous Hall resistivity in MBE-grown MnBi2Te4 thin films with the chemical potential tuned by both controlled in situ oxygen exposure and top gating. We find that elongated post-annealing obviously elevates the temperature to achieve quantization of the Hall resistivity, but also increases the residual longitudinal resistivity, indicating a picture of high-quality QAH puddles weakly coupled by tunnel barriers. These results help to clarify the puzzles in previous experimental studies on MnBi2Te4 and to find a way out of the big difficulty in obtaining MnBi2Te4 samples showing quantized transport properties.
关键词	intrinsic magnetic topological insulator quantized anomalous Hall resistivity molecular beam epitaxy quantized transport property
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	其他
资助项目	National Natural Science Foundation of China["92065206","11904053"] ; National Key Research and Development Program of China["2018YFA0307100","2017YFA0303303"] ; Innovation Program for Quan-tum Science and Technology[2021ZD0302502]
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:001118662600001
出版者	OXFORD UNIV PRESS
Scopus记录号	2-s2.0-85183698312
来源库	Web of Science
引用统计	被引频次[WOS]：20
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/638894
专题	南方科技大学
作者单位	1.Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China 2.Frontier Sci Ctr Quantum Informat, Beijing 100084, Peoples R China 3.Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China 4.Southern Univ Sci & Technol, Shenzhen 518055, Peoples R China 5.Hefei Natl Lab, Hefei 230088, Peoples R China 6.Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R China 7.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Bai, Yunhe,Li, Yuanzhao,Luan, Jianli,et al. Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi₂Te₄ thin films[J]. NATIONAL SCIENCE REVIEW,2023,11(2).
APA	Bai, Yunhe.,Li, Yuanzhao.,Luan, Jianli.,Liu, Ruixuan.,Song, Wenyu.,...&Feng, Xiao.(2023).Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi₂Te₄ thin films.NATIONAL SCIENCE REVIEW,11(2).
MLA	Bai, Yunhe,et al."Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi₂Te₄ thin films".NATIONAL SCIENCE REVIEW 11.2(2023).