Tailoring the Structure and Properties of Epitaxial Europium Tellurides on Si(100) through Substrate Temperature Control

In this study, we improved the growth procedure of EuTe and realized the epitaxial growth of EuTe4. Our research demonstrated a selective growth of both EuTe and EuTe4 on Si(100) substrates using the molecular beam epitaxy (MBE) technique and reveals that the substrate temperature plays a crucial role in determining the structural phase of the grown films: EuTe can be obtained at a substrate temperature of 220 degrees C while lowering down the temperature to 205 degrees C leads to the formation of EuTe4. A comparative analysis of the transmittance spectra of these two films manifested that EuTe is a semiconductor, whereas EuTe4 exhibits charge density wave (CDW) behavior at room temperature. The magnetic measurements displayed the antiferromagnetic nature in EuTe and EuTe4, with N & eacute;el temperatures of 10.5 and 7.1 K, respectively. Our findings highlight the potential for controllable growth of EuTe and EuTe4 thin films, providing a platform for further exploration of magnetism and CDW phenomena in rare earth tellurides.