Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n- and p-Type Ohmic Contacts to Metals with a Wide Range of Work Functions

Shao，Yangfan1,2; Wang，Qian1; Pan，Hui2,3; Shi，Xingqiang1

2019

10.1002/aelm.201900981

Advanced Electronic Materials   影响因子和分区

2199160X

2199-160X

Two-dimensional (2D) layered semiconductors with an intrinsic electric dipole p (pS for short), including group III-VI ferroelectrics and various Janus semiconductors, are attracting increasing attention for their exotic properties and versatile applications. Their potential in metal–semiconductor junctions is revealed. It is demonstrated that, for pS contacting to 2D metals with a wide range of work-functions, Schottky-barrier-free (SB-free) and tunable n- to p-type contacts can be obtained, which is important for complementary metal-oxide-semiconductor logical circuitry. As expected, low (high) work-function (WF) metals form n-type (p-type) SB-free contacts to pS. What is unexpected is the behavior of medium-WF metal-pS junctions (MpSJ); that is, by switching the polarization in pS, both n- and p-type SB-free contacts can be obtained by the same pS contacting to metals with a wide range of WF. More importantly, MpSJ with bilayer pS can form both n- and p-type SB-free contacts. These findings, SB-free and contact-type-tunable of MpSJ for metals with a wide range of work-functions, demonstrate the great potential of 2D pS for device applications.

2D Janus semiconductors group III 2-VI 3 ferroelectrics Schottky-barrier-free contact tunable n- to p-type contacts

SCI ; EI

英语

第一

Natural Science Foundation of Guangdong Province[2017A030310661] ; [2019B030301001] ; Southern University of Science and Technology[] ; [JCYJ20170817105007999] ; Universidade de Macau[] ; [MYRG2018-00003-IAPME]

Science & Technology - Other Topics ; Materials Science ; Physics

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000503218900001

Blackwell Publishing Ltd

20195207901607

CMOS integrated circuits ; Layered semiconductors ; Metals ; MOS devices ; Ohmic contacts ; Oxide semiconductors ; Schottky barrier diodes ; Van der Waals forces ; Work function

Semiconductor Devices and Integrated Circuits:714.2 ; Physical Chemistry:801.4 ; Atomic and Molecular Physics:931.3

2-s2.0-85076773721

Scopus

1.Department of Physics and Guangdong Provincial Key Laboratory for Computational Science and Material Design,Southern University of Science and Technology,Shenzhen,518055,China
2.Joint Key Laboratory of the Ministry of Education,Institute of Applied Physics and Materials Engineering,University of Macau,999078,Macao
3.Department of Physics and Chemistry,Faculty of Science and Technology,University of Macau,999078,Macao

Shao，Yangfan,Wang，Qian,Pan，Hui,et al. Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n- and p-Type Ohmic Contacts to Metals with a Wide Range of Work Functions[J]. Advanced Electronic Materials,2019,6(3).

Shao，Yangfan,Wang，Qian,Pan，Hui,&Shi，Xingqiang.(2019).Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n- and p-Type Ohmic Contacts to Metals with a Wide Range of Work Functions.Advanced Electronic Materials,6(3).

Shao，Yangfan,et al."Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n- and p-Type Ohmic Contacts to Metals with a Wide Range of Work Functions".Advanced Electronic Materials 6.3(2019).