The limit of anisotropic epitaxial lateral overgrowth in heteroepitaxial systems

Zhang，Yiwen1; Ma，Danhao2; Lin，Yiding3; Michel，Jurgen2,4; Wen，Rui Tao1

2023-12-25

10.1063/5.0178219

Applied Physics Letters   影响因子和分区

0003-6951

The separation of Ge and Si by an electrically isolating dielectric layer is essential to yield high efficiency for optical telecommunication applications and electronic applications such as Ge MOSFETs. Ge epitaxial lateral overgrowth (ELOG) is a promising approach to achieve Ge on Si separated by a thin dielectric layer. However, a general understanding of the anisotropic dynamics of ELOG Ge on Si is limited, which prevents its wide adoption. In this paper, we report how the orientation and width of the dielectric layer controls the ELOG. A competitive ELOG from perpendicular directions on a dielectric strip leads to a rapid growth along the long axis of the dielectric layer, or a mixed coalescence from perpendicular directions yielding various Ge confined configurations at the Ge/dielectric-layer interface. Especially, an angle of 7.5° between dielectric-layer and Si [110] axis shows the most pronounced unidirectional ELOG. ELOG disappears as the width of the dielectric mask exceeds 5.0 μm. The results reported here provide a general framework for ELOG of semiconductor materials.

EI ; SCI

英语

NI论文

第一

20240115311744

Anisotropy ; Epitaxial growth ; Silicon

Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconducting Materials:712.1 ; Chemical Operations:802.3 ; Physical Properties of Gases, Liquids and Solids:931.2 ; Crystal Growth:933.1.2

PHYSICS

2-s2.0-85181054331

Scopus

1.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
2.Department of Materials Science and Engineering,Massachusetts Institute of Technology,Cambridge,02139,United States
3.Institute of Microelectronics,Agency for Science,Technology and Research (ASTAR),Singapore,2 Fusionopolis Way, Innovis Tower,138634,Singapore
4.Materials Research Laboratory,Massachusetts Institute of Technology,Cambridge,02139,United States

Zhang，Yiwen,Ma，Danhao,Lin，Yiding,et al. The limit of anisotropic epitaxial lateral overgrowth in heteroepitaxial systems[J]. Applied Physics Letters,2023,123(26).

Zhang，Yiwen,Ma，Danhao,Lin，Yiding,Michel，Jurgen,&Wen，Rui Tao.(2023).The limit of anisotropic epitaxial lateral overgrowth in heteroepitaxial systems.Applied Physics Letters,123(26).

Zhang，Yiwen,et al."The limit of anisotropic epitaxial lateral overgrowth in heteroepitaxial systems".Applied Physics Letters 123.26(2023).