题名 | Enhanced Exchange Bias in Epitaxial High-Entropy Oxide Heterostructures |
作者 | |
发表日期 | 2023-12-20
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DOI | |
发表期刊 | |
ISSN | 1944-8244
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EISSN | 1944-8252
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卷号 | 15期号:50页码:58643-58650 |
摘要 | High-entropy oxides (HEOs) have gained significant interest in recent years due to their unique structural characteristics and potential to tailor functional properties. However, the electronic structure of the HEOs currently remains vastly unknown. In this work, combining magnetometry measurements, scanning transmission electron microscopy, and element-specific X-ray absorption spectroscopy, the electronic structure and magnetic properties of the perovskite-HEO La(CrMnFeCoNi)O epitaxial thin films are systemically studied. It is found that enhanced magnetic frustration emerges from competing exchange interactions of the five transition-metal cations with energetically favorable half-filled/full-filled electron configurations, resulting in an unprecedented large vertical exchange bias effect in the single-crystalline films. Furthermore, our findings demonstrate that the La(CrMnFeCoNi)O layer with a thickness down to 1 nm can be used as a pinning layer and strongly coupled with a ferromagnetic LaSrMnO layer, leading to a notable exchange bias and coercivity enhancement in a cooling field as small as 5 Oe. Our studies not only provide invaluable insight into the electronic structure of HEOs but also pave the way for a new era of large bias materials for spintronics devices. |
关键词 | |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
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学校署名 | 其他
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EI入藏号 | 20235115247361
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EI主题词 | Chromium compounds
; Cobalt compounds
; Electronic structure
; Entropy
; High resolution transmission electron microscopy
; Iron compounds
; Lanthanum compounds
; Manganese compounds
; Nickel compounds
; Oxide films
; Scanning electron microscopy
; Strontium compounds
; Transition metals
; X ray absorption spectroscopy
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EI分类号 | Minerals:482.2
; Metallurgy and Metallography:531
; Thermodynamics:641.1
; Optical Devices and Systems:741.3
; Atomic and Molecular Physics:931.3
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Scopus记录号 | 2-s2.0-85180084277
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来源库 | Scopus
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引用统计 |
被引频次[WOS]:1
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/669693 |
专题 | 理学院_物理系 |
作者单位 | 1.School of Materials Science and Engineering,Harbin Institute of Technology,Shenzhen,518055,China 2.Anhui Laboratory of Advanced Photon Science and Technology & Hefei National Research Center for Physical Sciences at the Microscale,University of Science and Technology of China,Hefei,230026,China 3.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China 4.Songshan Lake Materials Laboratory,Dongguan,523808,China 5.Department of Electrophysics,National Yang Ming Chiao Tung University,Hsinchu,30010,Taiwan 6.Department of Physics,Baylor University,Waco,76798,United States 7.Paul Scherrer Institut,Villigen,Forschungstrasse 111,5232,Switzerland 8.Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang,110016,China 9.Flexible Printed Electronics Technology Center,Harbin Institute of Technology,Shenzhen,518055,China 10.Max-Planck Institute for Chemical Physics of Solids,Dresden,Nöthnitzer Str. 40,01187,Germany 11.National Synchrotron Radiation Research Center,Hsinchu,101 Hsin-Ann Road,30076,Taiwan |
推荐引用方式 GB/T 7714 |
Wang,Hailin,Huang,Haoliang,Feng,Yanpeng,et al. Enhanced Exchange Bias in Epitaxial High-Entropy Oxide Heterostructures[J]. ACS Applied Materials and Interfaces,2023,15(50):58643-58650.
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APA |
Wang,Hailin.,Huang,Haoliang.,Feng,Yanpeng.,Ku,Yu Chieh.,Liu,Cheng En.,...&Chen,Zuhuang.(2023).Enhanced Exchange Bias in Epitaxial High-Entropy Oxide Heterostructures.ACS Applied Materials and Interfaces,15(50),58643-58650.
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MLA |
Wang,Hailin,et al."Enhanced Exchange Bias in Epitaxial High-Entropy Oxide Heterostructures".ACS Applied Materials and Interfaces 15.50(2023):58643-58650.
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