题名 | Strong In-Plane Optoelectronic Anisotropy and Polarization Sensitivity in Low-Symmetry 2D Violet Phosphorus |
作者 | |
通讯作者 | Zeng,Jianmin |
发表日期 | 2023-12-13
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DOI | |
发表期刊 | |
ISSN | 1530-6984
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EISSN | 1530-6992
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卷号 | 23期号:23页码:10821-10831 |
摘要 | Anisotropic optoelectronics based on low-symmetry two-dimensional (2D) materials hold immense potential for enabling multidimensional visual perception with improved miniaturization and integration capabilities, which has attracted extensive interest in optical communication, high-gain photoswitching circuits, and polarization imaging fields. However, the reported in-plane anisotropic photocurrent and polarized dichroic ratios are limited, hindering the achievement of high-performance anisotropic optoelectronics. In this study, we introduce novel low-symmetry violet phosphorus (VP) with a unique tubular cross-linked structure into this realm, and the corresponding anisotropic optical and optoelectronic properties are investigated both experimentally and theoretically for the first time. Remarkably, our prepared VP-based van der Waals phototransistor exhibits significant optoelectronic anisotropies with a giant in-plane anisotropic photocurrent ratio exceeding 10 and a comparable polarized dichroic ratio of 2.16, which is superior to those of most reported 2D counterparts. Our findings establish VP as an exceptional candidate for anisotropic optoelectronics, paving the way for future multifunctional applications. |
关键词 | |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
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重要成果 | NI论文
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学校署名 | 其他
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EI入藏号 | 20235115246662
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EI主题词 | Anisotropy
; Light polarization
; Optical communication
; Phototransistors
; Van der Waals forces
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EI分类号 | Semiconductor Devices and Integrated Circuits:714.2
; Optical Communication Systems:717.1
; Light/Optics:741.1
; Physical Chemistry:801.4
; Chemical Products Generally:804
; Physical Properties of Gases, Liquids and Solids:931.2
; Atomic and Molecular Physics:931.3
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ESI学科分类 | MATERIALS SCIENCE
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Scopus记录号 | 2-s2.0-85180012965
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来源库 | Scopus
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引用统计 |
被引频次[WOS]:11
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/669705 |
专题 | 理学院_物理系 |
作者单位 | 1.National Key Laboratory of Advanced Micro and Nano Manufacture Technology,Shanghai Jiao Tong University,Shanghai,200240,China 2.Department of Micro/Nano Electronics,School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai,200240,China 3.Xi’an Thermal Power Research Institute Co.,Ltd.,Xi’an,710054,China 4.School of Electrical Engineering,Xi’an Jiaotong University,Xi’an,710049,China 5.Department of Physics,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China 6.State Key Laboratory of Precision Measuring Technology and Instruments,Tianjin University,Tianjin,300072,China 7.National Institute for Materials Science,Tsukuba,1-1 Namiki,305-0044,Japan |
推荐引用方式 GB/T 7714 |
Chen,Weilin,Chen,An,Zhang,Ruan,et al. Strong In-Plane Optoelectronic Anisotropy and Polarization Sensitivity in Low-Symmetry 2D Violet Phosphorus[J]. Nano Letters,2023,23(23):10821-10831.
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APA |
Chen,Weilin.,Chen,An.,Zhang,Ruan.,Zeng,Jianmin.,Zhang,Lihui.,...&Liu,Gang.(2023).Strong In-Plane Optoelectronic Anisotropy and Polarization Sensitivity in Low-Symmetry 2D Violet Phosphorus.Nano Letters,23(23),10821-10831.
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MLA |
Chen,Weilin,et al."Strong In-Plane Optoelectronic Anisotropy and Polarization Sensitivity in Low-Symmetry 2D Violet Phosphorus".Nano Letters 23.23(2023):10821-10831.
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