题名 | Ballistic PbTe Nanowire Devices |
作者 | Wang,Yuhao1; Chen,Fangting1; Song,Wenyu1; Geng,Zuhan1; Yu,Zehao1; Yang,Lining1; Gao,Yichun1; Li,Ruidong1; Yang,Shuai1; Miao,Wentao1; Xu,Wei1; Wang,Zhaoyu1; Xia,Zezhou1; Song,Hua Ding2; Feng,Xiao1,2,3,4; Wang,Tiantian2,4; Zang,Yunyi2,4; Li,Lin2; Shang,Runan2,4; Xue,Qikun1,2,3,4,5 ![]() ![]() |
通讯作者 | He,Ke |
发表日期 | 2023-12-13
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DOI | |
发表期刊 | |
ISSN | 1530-6984
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EISSN | 1530-6992
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卷号 | 23期号:23页码:11137-11144 |
摘要 | Disorder is the primary obstacle in the current Majorana nanowire experiments. Reducing disorder or achieving ballistic transport is thus of paramount importance. In clean and ballistic nanowire devices, quantized conductance is expected, with plateau quality serving as a benchmark for disorder assessment. Here, we introduce ballistic PbTe nanowire devices grown by using the selective-area-growth (SAG) technique. Quantized conductance plateaus in units of 2e/h are observed at zero magnetic field. This observation represents an advancement in diminishing disorder within SAG nanowires as most of the previously studied SAG nanowires (InSb or InAs) have not exhibited zero-field ballistic transport. Notably, the plateau values indicate that the ubiquitous valley degeneracy in PbTe is lifted in nanowire devices. This degeneracy lifting addresses an additional concern in the pursuit of Majorana realization. Moreover, these ballistic PbTe nanowires may enable the search for clean signatures of the spin-orbit helical gap in future devices. |
关键词 | |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
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重要成果 | NI论文
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学校署名 | 其他
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EI入藏号 | 20234915155807
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EI主题词 | Antimony compounds
; Ballistics
; Benchmarking
; III-V semiconductors
; Indium antimonides
; Indium arsenide
; IV-VI semiconductors
; Lead compounds
; Narrow band gap semiconductors
; Quantum chemistry
; Quantum electronics
; Tellurium compounds
; Transport properties
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EI分类号 | Military Engineering:404.1
; Semiconducting Materials:712.1
; Nanotechnology:761
; Physical Chemistry:801.4
; Chemical Products Generally:804
; Inorganic Compounds:804.2
; Mechanics:931.1
; Physical Properties of Gases, Liquids and Solids:931.2
; Quantum Theory; Quantum Mechanics:931.4
; Solid State Physics:933
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ESI学科分类 | MATERIALS SCIENCE
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Scopus记录号 | 2-s2.0-85178089571
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来源库 | Scopus
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引用统计 |
被引频次[WOS]:9
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/669708 |
专题 | 南方科技大学 |
作者单位 | 1.State Key Laboratory of Low Dimensional Quantum Physics,Department of Physics,Tsinghua University,Beijing,100084,China 2.Beijing Academy of Quantum Information Sciences,Beijing,100193,China 3.Frontier Science Center for Quantum Information,Beijing,100084,China 4.Hefei National Laboratory,Hefei,230088,China 5.Southern University of Science and Technology,Shenzhen,518055,China |
推荐引用方式 GB/T 7714 |
Wang,Yuhao,Chen,Fangting,Song,Wenyu,et al. Ballistic PbTe Nanowire Devices[J]. Nano Letters,2023,23(23):11137-11144.
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APA |
Wang,Yuhao.,Chen,Fangting.,Song,Wenyu.,Geng,Zuhan.,Yu,Zehao.,...&Zhang,Hao.(2023).Ballistic PbTe Nanowire Devices.Nano Letters,23(23),11137-11144.
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MLA |
Wang,Yuhao,et al."Ballistic PbTe Nanowire Devices".Nano Letters 23.23(2023):11137-11144.
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条目包含的文件 | 条目无相关文件。 |
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