A Wideband Millimeter-Wave GaN Low-Noise Amplifier Using Multi-Stage Feedback Compensation

Wei Huang1; Xiaohu Fang1; Wei Lin2; Guanlong Huang3; Xing Wang4; Luyu Zhao4

10.1109/IMWS-AMP57814.2023.10381036

2023

2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

2766-9564

979-8-3503-0877-8

2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

1-3

13-15 Nov. 2023

Chengdu, China

This paper presents a 10 to 30 GHz wideband GaN low-noise amplifier (LNA) designed using a 0.15-µm gate-length gallium nitride (GaN) high electron-mobility transistor (HEMT) process. Through a drain-to-gate feedback compensation technique, the transistor gain roll-off is mitigated, and the gain flatness is significantly improved. With the above technique adopted for each stage of the proposed LNA, improved gain response, stability, and reduced design complexity are obtained under a slight penalty on the noise figure (NF). Full layout simulation results show that the designed LNA delivers a flat small signal gain of 22.8 to 26 dB with a NF of 2.17 dB to 2.73 dB over 10–30 GHz.

Wideband Low-noise Amplifier (LNA) Feedback Compensation Noise Figure (NF) GaN High Electron-mobility Transistor

第一 ; 通讯

EI

20240515474906

IEEE

1.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China
2.Departmment of Electrical and Electronic Engineering, The Hong Kong Polytechnic University, Hong Kong
3.Foshan University, Foshan, China
4.National Key Laboratory of Antennas and Microwave Technology, Xidian University, Xi'an, China

Wei Huang,Xiaohu Fang,Wei Lin,et al. A Wideband Millimeter-Wave GaN Low-Noise Amplifier Using Multi-Stage Feedback Compensation[C],2023:1-3.