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题名

Lumination-property characterization for InP/ZnSe/ZnSeS/ZnS quantum dots with variable temperature

作者
DOI
发表日期
2023
ISBN
979-8-3503-3098-4
会议录名称
页码
1-4
会议日期
17-20 Aug. 2023
会议地点
Singapore, Singapore
摘要
Red-emissive InP/ZnSe/ZnSeS/ZnS quantum dots (QDs) with multiple shells were fabricated and evaluated with a lumination-property-characterization system with variable temperature. The proposed system is capable of monitoring luminous efficiency, light intensity, optical spectra, and temperature variation of the QD solution with heating equipment. The luminous efficiency of the 611-nm QD sample decreases to 0.35 under 140°C and reverts to 0.69 under the ambient temperature (RT). The light intensity and fluorescent lifetime of the 611-nm sample show a smaller variation after heating in comparison with that of the 649-nm sample, which possesses a larger core during the synthesizing process. The proposed illumination property characterization system can effectively evaluate QDs with different excitation and temperature conditions. Our research results on InP/ZnSe/ZnSeS/ZnS QDs under various temperatures can provide guidelines for the application of InP QDs in display, illumination, and communication.
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相关链接[IEEE记录]
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EI入藏号
20240415433202
EI主题词
Fluorescence ; III-V semiconductors ; Indium phosphide ; Nanocrystals ; Quantum efficiency ; Selenium compounds ; Semiconducting indium phosphide ; Semiconductor quantum dots ; Temperature
EI分类号
Thermodynamics:641.1 ; Semiconducting Materials:712.1 ; Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Nanotechnology:761 ; Inorganic Compounds:804.2 ; Quantum Theory; Quantum Mechanics:931.4 ; Crystalline Solids:933.1
来源库
IEEE
全文链接https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10373207
引用统计
成果类型会议论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/673738
专题工学院_电子与电气工程系
作者单位
1.School of Electronic and Information Engineering, Guangdong Ocean University, Zhanjiang, China
2.Department of Electrical and Electronic Engineering, Institute of Nanoscience & Applications, Southern University of Science and Technology, Shenzhen, China
3.College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen, China
推荐引用方式
GB/T 7714
Hua Xiao,Xijian Duan,Junjie Hao,et al. Lumination-property characterization for InP/ZnSe/ZnSeS/ZnS quantum dots with variable temperature[C],2023:1-4.
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