Ultrahigh-Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe2/Graphene/SnS2 p-g-n Junctions

Li, Alei1,2; Chen, Qianxue1; Wang, Peipei1; Gan, Yuan1; Qi, Tailei1; Wang, Peng1; Tang, Fangdong1; Wu, Judy Z.3; Chen, Rui4; Zhang, Liyuan1; Gong, Youpin1,4,5

2019-02-08

10.1002/adma.201805656

Advanced Materials   影响因子和分区

0935-9648

1521-4095

2D atomic sheets of transition metal dichalcogenides (TMDs) have a tremendous potential for next-generation optoelectronics since they can be stacked layer-by-layer to form van der Waals (vdW) heterostructures. This allows not only bypassing difficulties in heteroepitaxy of lattice-mismatched semiconductors of desired functionalities but also providing a scheme to design new optoelectronics that can surpass the fundamental limitations on their conventional semiconductor counterparts. Herein, a novel 2D h-BN/p-MoTe2/graphene/n-SnS2/h-BN p–g–n junction, fabricated by a layer-by-layer dry transfer, demonstrates high-sensitivity, broadband photodetection at room temperature. The combination of the MoTe2 and SnS2 of complementary bandgaps, and the graphene interlayer provides a unique vdW heterostructure with a vertical built-in electric field for high-efficiency broadband light absorption, exciton dissociation, and carrier transfer. The graphene interlayer plays a critical role in enhancing sensitivity and broadening the spectral range. An optimized device containing 5−7-layer graphene has been achieved and shows an extraordinary responsivity exceeding 2600 A W⁻¹ with fast photoresponse and specific detectivity up to ≈10¹³ Jones in the ultraviolet–visible–near-infrared spectrum. This result suggests that the vdW p–g–n junctions containing multiple photoactive TMDs can provide a viable approach toward future ultrahigh-sensitivity and broadband photonic detectors.
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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第一 ; 通讯

The work was supported by the Science and Technology Innovation Commission of Shenzhen Municipality (Grant Nos. JCYJ20170817110751776 and JCYJ20170307105434022) and the Guangdong Innovative and Entrepreneurial Research Team Program (Grant No. 2016ZT06D348). R.C. acknowledges the supports from national 1000 plan for young talents, the National Natural Science Foundation of China (Grant No. 11574130), and the Science and Technology Innovation Commission of Shenzhen Municipality (Grant Nos. KQJSCX20170726145748464 and JCYJ20150930160634263). J.Z.W. acknowledges US NSF contracts (Nos. NSF-DMR-1337737 and NSF-DMR-1508494) and the United States Army Research Office contract (No. ARO-W911NF-16-1-0029).

Wiley-VCH Verlag

20185106265826

Absorption spectroscopy ; Photodetectors ; Photons ; Van der Waals forces ; Electric fields ; Tellurium compounds ; Graphene ; Heterojunctions ; Infrared devices ; Semiconducting tin compounds ; Layered semiconductors ; IV-VI semiconductors ; Sulfur compounds ; Light absorption

Metallurgy and Metallography:531 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Chemical Products Generally:804 ; Atomic and Molecular Physics:931.3

MATERIALS SCIENCE

EV Compendex

1.Department of Physics, Southern University of Science and Technology, Shenzhen; 518055, China
2.Department of Physics, Harbin Institute of Technology, Harbin; 150001, China
3.Department of Physics and Astronomy, University of Kansas, Lawrence; KS; 66045, United States
4.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen; 518055, China
5.SUSTech Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology, Shenzhen; 518055, China

Li, Alei,Chen, Qianxue,Wang, Peipei,et al. Ultrahigh-Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe2/Graphene/SnS2 p-g-n Junctions[J]. Advanced Materials,2019,31.

Li, Alei.,Chen, Qianxue.,Wang, Peipei.,Gan, Yuan.,Qi, Tailei.,...&Gong, Youpin.(2019).Ultrahigh-Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe2/Graphene/SnS2 p–g–n Junctions.Advanced Materials,31.

Li, Alei,et al."Ultrahigh-Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe2/Graphene/SnS2 p–g–n Junctions".Advanced Materials 31(2019).