Interlayer Transition in a vdW Heterostructure toward Ultrahigh Detectivity Shortwave Infrared Photodetectors

Qi, Tailei1; Gong, Youpin1,2,3; Li, Alei1; Ma, Xiaoming1,4; Wang, Peipei1; Huang, Rui1; Liu, Chang1,5; Sakidja, Ridwan6; Wu, Judy Z.7; Chen, Rui3; Zhang, Liyuan1

2020

10.1002/adfm.201905687

Advanced Functional Materials   影响因子和分区

1616-301X

1616-3028

Van der Waals (vdW) heterostructures of 2D atomically thin layered materials (2DLMs) provide a unique platform for constructing optoelectronic devices by staking 2D atomic sheets with unprecedented functionality and performance. A particular advantage of these vdW heterostructures is the energy band engineering of 2DLMs to achieve interlayer excitons through type-II band alignment, enabling spectral range exceeding the cutoff wavelengths of the individual atomic sheets in the 2DLM. Herein, the high performance of GaTe/InSe vdW heterostructures device is reported. Unexpectedly, this GaTe/InSe vdWs p–n junction exhibits extraordinary detectivity in a new shortwave infrared (SWIR) spectrum, which is forbidden by the respective bandgap limits for the constituent GaTe (bandgap of ≈1.70 eV in both the bulk and monolayer) and InSe (bandgap of ≈1.20–1.80 eV depending on thickness reduction from bulk to monolayer). Specifically, the uncooled SWIR detectivity is up to ≈10¹⁴ Jones at 1064 nm and ≈10¹² Jones at 1550 nm, respectively. This result indicates that the 2DLM vdW heterostructures with type-II band alignment produce an interlayer exciton transition, and this advantage can offer a viable strategy for devising high-performance optoelectronics in SWIR or even longer wavelengths beyond the individual limitations of the bandgaps and heteroepitaxy of the constituent atomic layers.
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

EI

英语

第一 ; 通讯

T.L.Q. and Y.P.G. contributed equally to this work. The work was supported by the Shenzhen Science and Technology Innovation Commission (Grant Nos. JCYJ20170817110751776 and JCYJ20170307105434022) and the Guangdong Innovative and Entrepreneurial Research Team Program (Grant No. 2016ZT06D348). R.C. acknowledges the supports from the National Natural Science Foundation of China (Grant No. 11574130) and the Shenzhen Science and Technology Innovation Commission (Grant Nos. KQJSCX20170726145748464 and JCYJ20180305180553701). J.Z.W. acknowledges support by the US National Science Foundation (Contracts Nos. NSF-DMR-1909292, NSF-ECCS-1809293, and NSF-DMR-1508494) and the United States Army Research Office (Contract No. ARO-W911NF-16-1-0029).

Wiley-VCH Verlag

20194507627005

Energy gap ; Indium compounds ; Excitons ; Infrared radiation ; Selenium compounds ; Van der Waals forces ; Monolayers ; Atoms ; Photons

Light/Optics:741.1 ; Physical Chemistry:801.4 ; Atomic and Molecular Physics:931.3

MATERIALS SCIENCE

EV Compendex

1.Department of Physics, Southern University of Science and Technology, Shenzhen; 518055, China
2.Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology, Shenzhen; 518055, China
3.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen; 518055, China
4.Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing; 100190, China
5.Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen; 518055, China
6.Department of Physics, Astronomy and Materials Science, Missouri State University, Springfield; MO; 65897, United States
7.Department of Physics and Astronomy, University of Kansas, Lawrence; KS; 66045, United States

Qi, Tailei,Gong, Youpin,Li, Alei,et al. Interlayer Transition in a vdW Heterostructure toward Ultrahigh Detectivity Shortwave Infrared Photodetectors[J]. Advanced Functional Materials,2020,30.

Qi, Tailei.,Gong, Youpin.,Li, Alei.,Ma, Xiaoming.,Wang, Peipei.,...&Zhang, Liyuan.(2020).Interlayer Transition in a vdW Heterostructure toward Ultrahigh Detectivity Shortwave Infrared Photodetectors.Advanced Functional Materials,30.

Qi, Tailei,et al."Interlayer Transition in a vdW Heterostructure toward Ultrahigh Detectivity Shortwave Infrared Photodetectors".Advanced Functional Materials 30(2020).