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题名

Elevating the Light Output Power Density of Scaling-down AlGaN Ultraviolet-C Micro-LED

作者
DOI
发表日期
2023
会议名称
The 2023 International Conference on Display Technology, (ICDT 2023)
ISSN
0097-966X
EISSN
2168-0159
会议录名称
卷号
54
页码
37-40
会议日期
March 31, 2023 - April 3, 2023
会议地点
Nanjing, China
出版者
摘要
Ultraviolet band-C (UV-C) micro-light-emitting diodes (Micro-LEDs) with high optical power density are increasingly demanded in the utilization of sterilization, solar-blind communications, and neuroscience for the robust structure and adjustable emission wavelength. In this work, AlGaN UV-C Micro-LEDs are fabricated and characterized in 5×5, 10×10, 20×20, 30×30, 50×50, 80×80, and 100×100 μm2. With pixel size scaling down, the smaller devices have the potential to emit more considerable light output power (LOP) density at the same injected current density. This LOP density sizing effect implies higher luminescence efficiencies on small-sized UV-C Micro-LEDs, which could be widely adopted by the industry.
© 2023, John Wiley and Sons Inc. All rights reserved.
学校署名
其他
语种
英语
收录类别
资助项目
The authors would like to thank Nanosystem Fabrication Facility (NFF(CWB)), Materials Characterization and Preparation Facility (MCPF(CWB)), Electronic Packaging Laboratory (EPACK Lab) in HKUST, and Shenzhen Sitan Technology Co., Ltd. for precious technical support in this work. This work was supported by Key-Area Research and Development Program of Guangdong Province (Grant No. 2019B010925001), High-level University Fund G02236005. This work was also supported by the State Key Laboratory of Advanced Displays and Optoelectronics (Project No. VPRGO13EG02).
EI入藏号
20234214880318
EI主题词
Aluminum alloys ; Aluminum gallium nitride ; Gallium alloys ; III-V semiconductors ; Semiconductor alloys
EI分类号
Aluminum Alloys:541.2 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Inorganic Compounds:804.2
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EV Compendex
引用统计
成果类型会议论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/673829
专题工学院_电子与电气工程系
作者单位
1.State Key Laboratory of Advanced Displays and Optoelectronics Technologies, Hong Kong University of Science and Technology, Hong Kong
2.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, China
推荐引用方式
GB/T 7714
Feng, Feng,Liu, Yibo,Zhang, Ke,et al. Elevating the Light Output Power Density of Scaling-down AlGaN Ultraviolet-C Micro-LED[C]:John Wiley and Sons Inc,2023:37-40.
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