Exploring the Temperature Dependence of GaN-on-GaN Homoepitaxy Micro- LEDs

In this study, we explored the electrical characteristics of micro- LEDs with various pixel sizes on GaN substrates, demonstrating that small sizes have high current density due to superior current spreading. Due to the p-electrode ohmic contact's temperature dependence, which is supported by TLM measurements, the ideal factor declines as temperature rises. We also show the temperature sensitivity in proportion to device size at a certain current density, which is susceptible to carrier non-radiative recombination brought on by surface defects. We comprehensively present the thermal properties of GaN-on-GaN homoepitaxy micro-LEDs, laying the groundwork for improved device stability and reliability.