南方科技大学知识苑(SUSTech KC): Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode

题名	Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode
作者	Xu，Bing1,2 ; Zhao，Jun Liang 1; Wang，Shu Guo 1; Dai，Hai Tao 1; Yu，Sheng Fu 3; Lin，Ray Ming 2; Chu，Fu Chuan 2; Huang，Chou Hsiung 2; Sun，Xiao Wei4
DOI	10.1117/12.2001788
发表日期	2013
ISSN	0277-786X
会议录名称	Proceedings of SPIE - The International Society for Optical Engineering
卷号	8641
会议地点	San Francisco, CA, United states
出版者	SPIE
摘要	InGaN/GaN blue light emitting diodes with varied quantum well thickness from 2.4 nm to 3.6 nm are fabricated and characterized by atmosphere pressure metalorganic chemical vapor deposition (AP-MOCVD). Experimental results show that the exciton localization effect is enhanced from 21.76 to 23.48 by increasing the quantum well thickness from 2.4 nm to 2.7 nm. However, with the further increase of quantum well thickness, the exciton localization effect becomes weaker. Meanwhile, the peak wavelength of electroluminescence redshift with the increase of well thickness due to the larger quantum confined Stark effect (QCSE). In addition, the efficiency droop can be improved by increasing the well thickness. © 2013 SPIE.
关键词	Efficiency droop Localized state MOCVD QCSE
学校署名	其他
语种	英语
相关链接	[Scopus记录]
收录类别	CPCI-S ; EI
WOS记录号	WOS:000325366600001
EI入藏号	20132316390873
EI主题词	Diodes ; Efficiency ; Excitons ; Gallium alloys ; III-V semiconductors ; Indium alloys ; Light ; Light emitting diodes ; Metallorganic chemical vapor deposition ; Semiconductor alloys ; Semiconductor counters
EI分类号	Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Chemical Reactions:802.2 ; Production Engineering:913.1
Scopus记录号	2-s2.0-84878309682
来源库	Scopus
引用统计	被引频次[WOS]：0
成果类型	会议论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/68882
专题	南方科技大学
作者单位	1.Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology,School of Science,Tianjin University,Tianjin 300072,China 2.Graduate Institute of Electronic Engineering and Green Technology Research Center,Chang Gung University,Taoyuan 333,Taiwan 3.Department of Electrical Engineering,Center for Micro/Nano Science and Technology,National Cheng Kung University,Tainan 70101,Taiwan 4.Department of Electronic and Computer Engineering,South University of Science and Technology of China,Shenzhen, Guangdong,China
推荐引用方式 GB/T 7714	Xu，Bing,Zhao，Jun Liang,Wang，Shu Guo,et al. Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode[C]:SPIE,2013.