Interfacial Passivation Strategy Enabled Efficient Perovskite Quantum Dots Light Emitting Diodes

Li，Xuefei1,2; Zhao，Jinyang2; Chen，Lixuan2; Zhang，Xin2; Wei，Yi3; Zhang，Shengdong1

10.1117/12.3016238

2024

0277-786X

1996-756X

Proceedings of SPIE - The International Society for Optical Engineering

13068

Perovskite quantum dot light-emitting diodes (PeQLEDs) have emerged as a promising candidate for high-quality lighting and displays, where significant progress has been made in the modification and optimization of perovskite quantum dots (PeQDs) emitting layer to achieve improved device efficiency. However, limited attention has been given to interfacial trap state passivation for efficient and stable PeQLEDs thus far. We propose a straightforward approach to enhance the performance of PeQLEDs by thermal-evaporating a phosphine oxide molecule, SPPO13, onto the PeQDs emitting layer as an interface passivation layer. The interfacial passivation leads to a significant improvement in both maximum brightness and maximum external quantum efficiency (EQE) of PeQLEDs, reaching 28907.1 cd m and 10.3%, respectively. This enhancement is attributed to reduced trap-assisted recombination and improved electron transport characteristics.

interfacial passivation light-emitting diodes perovskite quantum dot phosphine oxide

其他

英语

EI

2-s2.0-85184656085

Scopus

1.School of Electronic and Computer Engineering,Peking University,Shenzhen,Guangdong,China
2.Shenzhen China Star Optoelectronics Semiconductor Display Technology Co.,Ltd.,Shenzhen,Guangdong,China
3.Department of Chemistry,Southern University of Science and Technology,Shenzhen,Guangdong,China

Li，Xuefei,Zhao，Jinyang,Chen，Lixuan,et al. Interfacial Passivation Strategy Enabled Efficient Perovskite Quantum Dots Light Emitting Diodes[C],2024.