Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

Illarionov，Yu Yu1,2; Karl，A.2; Smets，Q.3; Kaczer，B.3; Knobloch，T.2; Panarella，L.3; Schram，T.3; Brems，S.3; Cott，D.3; Asselberghs，I.3; Grasser，T.2

2024-12-01

10.1038/s41699-024-00445-0

npj 2D Materials and Applications   影响因子和分区

2397-7132

Recent advances in fabricating field-effect transistors with MoS and other related two-dimensional (2D) semiconductors have inspired the industry to begin with the integration of these emerging technologies into FAB-compatible process flows. Just like in the lab research on 2D devices performed in the last decade, focus during development is typically put on pure technology-related issues, such as low-temperature growth methods of large-area 2D films on target substrates, damage-free transfer from sacrificial substrates and growth of top-gate oxides. With maturing technology, the problem of stability limitations caused by oxide traps is gradually coming into focus now. Thus, here we report an in-depth analysis of hysteresis and bias-temperature instabilities for MoS FETs fabricated using a 300 mm FAB-compatible process. By performing a comprehensive statistical analysis on devices with top gate lengths ranging between 18 nm and 10 μm, we demonstrate that aggressive scaling results in additional stability problems, likely caused by defective edges of the scaled top gates, in particular at higher operation temperatures. These are important insights for understanding and addressing the stability limitations in future nanoscale 2D FETs produced using FAB process lines.

SCI

英语

第一

2-s2.0-85184255849

Scopus

1.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,1088 Xueyuan Blvd,518055,China
2.Institute for Microelectronics (TU Wien),Vienna,Gusshausstrasse 27–29,1040,Austria
3.imec,Leuven,Kapeldreef 75,B-3001,Belgium

Illarionov，Yu Yu,Karl，A.,Smets，Q.,et al. Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors[J]. npj 2D Materials and Applications,2024,8(1).

Illarionov，Yu Yu.,Karl，A..,Smets，Q..,Kaczer，B..,Knobloch，T..,...&Grasser，T..(2024).Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors.npj 2D Materials and Applications,8(1).

Illarionov，Yu Yu,et al."Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors".npj 2D Materials and Applications 8.1(2024).