Atomic-scale manipulation of polar domain boundaries in monolayer ferroelectric In2Se3

Zhang，Fan1,6; Wang，Zhe2,3,7; Liu，Lixuan4,5; Nie，Anmin5; Li，Yanxing6; Gong，Yongji4; Zhu，Wenguang2,3; Tao，Chenggang1,8

2024-12-01

10.1038/s41467-023-44642-9

Nature Communications   影响因子和分区

2041-1723

Domain boundaries have been intensively investigated in bulk ferroelectric materials and two-dimensional materials. Many methods such as electrical, mechanical and optical approaches have been utilized to probe and manipulate domain boundaries. So far most research focuses on the initial and final states of domain boundaries before and after manipulation, while the microscopic understanding of the evolution of domain boundaries remains elusive. In this paper, we report controllable manipulation of the domain boundaries in two-dimensional ferroelectric InSe with atomic precision using scanning tunneling microscopy. We show that the movements of the domain boundaries can be driven by the electric field from a scanning tunneling microscope tip and proceed by the collective shifting of atoms at the domain boundaries. Our density functional theory calculations reveal the energy path and evolution of the domain boundary movement. The results provide deep insight into domain boundaries in two-dimensional ferroelectric materials and will inspire inventive applications of these materials.

SCI

英语

其他

2-s2.0-85183027172

Scopus

1.Department of Physics,Virginia Tech,Blacksburg,24061,United States
2.International Center for Quantum Design of Functional Materials (ICQD),Hefei National Research Center for Physical Sciences at the Microscale,University of Science and Technology of China,Hefei,230026,China
3.Department of Physics,University of Science and Technology of China,Hefei,230026,China
4.School of Materials Science and Engineering,Beihang University,Beijing,100191,China
5.Center for High Pressure Science,State Key Laboratory of Metastable Materials Science and Technology,Yanshan University,Qinhuangdao,066004,China
6.Department of Physics,University of Texas at Austin,Austin,78712,United States
7.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
8.Center for Nanophase Materials Sciences,Oak Ridge National Laboratory,Oak Ridge,37830,United States

Zhang，Fan,Wang，Zhe,Liu，Lixuan,et al. Atomic-scale manipulation of polar domain boundaries in monolayer ferroelectric In2Se3[J]. Nature Communications,2024,15(1).

Zhang，Fan.,Wang，Zhe.,Liu，Lixuan.,Nie，Anmin.,Li，Yanxing.,...&Tao，Chenggang.(2024).Atomic-scale manipulation of polar domain boundaries in monolayer ferroelectric In2Se3.Nature Communications,15(1).

Zhang，Fan,et al."Atomic-scale manipulation of polar domain boundaries in monolayer ferroelectric In2Se3".Nature Communications 15.1(2024).