题名 | Giant intrinsic photovoltaic effect in one-dimensional van der Waals grain boundaries |
作者 | |
通讯作者 | Chen,Xiaolong |
发表日期 | 2024-12-01
|
DOI | |
发表期刊 | |
EISSN | 2041-1723
|
卷号 | 15期号:1 |
摘要 | The photovoltaic effect lies at the heart of eco-friendly energy harvesting. However, the conversion efficiency of traditional photovoltaic effect utilizing the built-in electric effect in p-n junctions is restricted by the Shockley-Queisser limit. Alternatively, intrinsic/bulk photovoltaic effect (IPVE/BPVE), a second-order nonlinear optoelectronic effect arising from the broken inversion symmetry of crystalline structure, can overcome this theoretical limit. Here, we uncover giant and robust IPVE in one-dimensional (1D) van der Waals (vdW) grain boundaries (GBs) in a layered semiconductor, ReS. The IPVE-induced photocurrent densities in vdW GBs are among the highest reported values compared with all kinds of material platforms. Furthermore, the IPVE-induced photocurrent is gate-tunable with a polarization-independent component along the GBs, which is preferred for energy harvesting. The observed IPVE in vdW GBs demonstrates a promising mechanism for emerging optoelectronics applications. |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
|
Scopus记录号 | 2-s2.0-85182196629
|
来源库 | Scopus
|
引用统计 |
被引频次[WOS]:14
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/701278 |
专题 | 工学院_电子与电气工程系 量子科学与工程研究院 |
作者单位 | 1.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,1088 Xueyuan Avenue,518055,China 2.Department of Materials Science and Engineering,National University of Singapore,Singapore,117575,Singapore 3.School of Materials Science and Engineering,Peking University,Beijing,100871,China 4.Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen,1088 Xueyuan Avenue,518055,China 5.International Quantum Academy,Shenzhen,518048,China 6.State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai,200083,China |
第一作者单位 | 电子与电气工程系 |
通讯作者单位 | 电子与电气工程系 |
第一作者的第一单位 | 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Zhou,Yongheng,Zhou,Xin,Yu,Xiang Long,et al. Giant intrinsic photovoltaic effect in one-dimensional van der Waals grain boundaries[J]. Nature Communications,2024,15(1).
|
APA |
Zhou,Yongheng.,Zhou,Xin.,Yu,Xiang Long.,Liang,Zihan.,Zhao,Xiaoxu.,...&Chen,Xiaolong.(2024).Giant intrinsic photovoltaic effect in one-dimensional van der Waals grain boundaries.Nature Communications,15(1).
|
MLA |
Zhou,Yongheng,et al."Giant intrinsic photovoltaic effect in one-dimensional van der Waals grain boundaries".Nature Communications 15.1(2024).
|
条目包含的文件 | 条目无相关文件。 |
|
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论