Boosting room-temperature thermoelectric performance of Mg3Sb1.5Bi0.5 material through breaking the contradiction between carrier concentration and carrier mobility

Jiang，Feng1,2; Wu，Xinzhi1; Zhu，Yongbin1; Xia，Chengliang2; Han，Zhijia1; Yu，Hulei2,4; Chen，Chen2; Feng，Tao1; Mao，Jun3; Chen，Yue2; Liu，Weishu1,5

2024-02-15

10.1016/j.actamat.2023.119636

Acta Materialia   影响因子和分区

1359-6454

Recently, low-cost MgSbBi-based materials with high performance near room temperatures have been reported, which are considered to be promising candidates for replacing commercial BiTe-based materials. Herein, we report a high power factor of ∼3000 μW m K and a ZT value of 0.82 at room temperature in TiMgSbBiTe. Ti dopant entering into the Mg1 sublattice slightly increases the carrier concentration by the introduction of impurity states and enhances the carrier mobility by the promotion of grain size growth. The two-donor doping strategy breaks the contradiction between carrier concentration and carrier mobility, thus significantly improving the electrical transport properties near room temperatures. In addition, the introduction of defects by Ti dopant contributes to the decreased lattice thermal conductivity. Consequently, a ZT value of 1.19 is obtained at 50–250 ℃, ranking the top among reported n-type thermoelectric materials. Moreover, the as-fabricated single-leg device shows an high engineering efficiency considering the radiation calibration, i.e., 7.2 % and 11.8 % at temperature differences of 250 ℃ and 500 ℃ with T = 0 ℃, respectively, demonstrating the great potential of substituting the commercial BiTe-family.

Efficiency Electronic scattering Mg3Sb1.5Bi0.5 Thermoelectric Two-donon strategy

EI

英语

第一

MATERIALS SCIENCE

2-s2.0-85183681020

Scopus

1.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
2.Department of Mechanical Engineering,The University of Hong Kong,Pokfulam Road, SAR,Hong Kong
3.School of Materials Science and Engineering,Institute of Materials Genome & Big Data,Harbin Institute of Technology (Shenzhen),Shenzhen,518055,China
4.School of Materials Science and Engineering,South China University of Technology,Guangzhou,510641,China
5.Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices,Southern University of Science and Techonology,Shenzhen,Guangdong,518055,China

Jiang，Feng,Wu，Xinzhi,Zhu，Yongbin,et al. Boosting room-temperature thermoelectric performance of Mg3Sb1.5Bi0.5 material through breaking the contradiction between carrier concentration and carrier mobility[J]. Acta Materialia,2024,265.

Jiang，Feng.,Wu，Xinzhi.,Zhu，Yongbin.,Xia，Chengliang.,Han，Zhijia.,...&Liu，Weishu.(2024).Boosting room-temperature thermoelectric performance of Mg3Sb1.5Bi0.5 material through breaking the contradiction between carrier concentration and carrier mobility.Acta Materialia,265.

Jiang，Feng,et al."Boosting room-temperature thermoelectric performance of Mg3Sb1.5Bi0.5 material through breaking the contradiction between carrier concentration and carrier mobility".Acta Materialia 265(2024).